TY - JOUR
T1 - High quality graphene films with a clean surface prepared by an UV/ozone assisted transfer process
AU - Sun, Hongyan
AU - Chen, Ding
AU - Wu, Yuming
AU - Yuan, Qilong
AU - Guo, Liangchao
AU - Dai, Dan
AU - Xu, Yang
AU - Zhao, Pei
AU - Jiang, Nan
AU - Lin, Cheng-Te
N1 - A correction exists for this article and can be found in Journal of Materials Chemistry C, 5 (15), p.3855, doi: 10.1039/c7tc90056b. Copyright the Publisher 2017. Copyright the Publisher 2017. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.
PY - 2017
Y1 - 2017
N2 - Graphene shows great promise as a transparent conductive electrode for optoelectronic applications. However, residues generated during the graphene transfer process lead to the degradation of device performance. Here, we show that a combination of UV/ozone pretreatment with the conventional process of graphene transfer can help in obtaining a large area graphene film with a clean surface on arbitrary substrates. In general, after CVD growth, a graphene film would be formed on both bottom and upper surfaces of a Cu foil. With UV/ozone pretreatment, a graphene layer with an undamaged and clean surface can be obtained, which is free of the residues. In addition, the quality of the obtained graphene can also be improved, which is revealed by the increase of the I2D/IG ratio from 2.0 to 3.6 for graphene films prepared without and with UV/ozone pretreatment, respectively. The transferred graphene films show higher transparency (97.5% at 550 nm), and the electron mobility (1178 cm2 V−1 s−1) can be improved by a factor of two compared to that prepared by the conventional transfer process (685 cm2 V−1 s−1). Considering its high efficiency, low cost, and easy scalability, the UV/ozone-assisted transfer method can be beneficial to the performance of graphene-based device applications such as transparent conducting electrodes.
AB - Graphene shows great promise as a transparent conductive electrode for optoelectronic applications. However, residues generated during the graphene transfer process lead to the degradation of device performance. Here, we show that a combination of UV/ozone pretreatment with the conventional process of graphene transfer can help in obtaining a large area graphene film with a clean surface on arbitrary substrates. In general, after CVD growth, a graphene film would be formed on both bottom and upper surfaces of a Cu foil. With UV/ozone pretreatment, a graphene layer with an undamaged and clean surface can be obtained, which is free of the residues. In addition, the quality of the obtained graphene can also be improved, which is revealed by the increase of the I2D/IG ratio from 2.0 to 3.6 for graphene films prepared without and with UV/ozone pretreatment, respectively. The transferred graphene films show higher transparency (97.5% at 550 nm), and the electron mobility (1178 cm2 V−1 s−1) can be improved by a factor of two compared to that prepared by the conventional transfer process (685 cm2 V−1 s−1). Considering its high efficiency, low cost, and easy scalability, the UV/ozone-assisted transfer method can be beneficial to the performance of graphene-based device applications such as transparent conducting electrodes.
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UR - https://doi.org/10.1039/C7TC90056B
U2 - 10.1039/c6tc05505b
DO - 10.1039/c6tc05505b
M3 - Article
SN - 2050-7534
VL - 5
SP - 1880
EP - 1884
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 8
ER -