High-resolution electron beam lithography for the fabrication of high-density dielectric metamaterials

W. Zhang*, A. Potts, D. M. Bagnall, B. R. Davidson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Electron beam lithography has been applied to the fabrication of nanoscale two-dimensional chiral structures with various designs. A fabrication process for planar chiral structures in a thin silicon nitride layer using electron beam lithography and dry etching is presented. A top conductive coating is applied during electron-beam exposure to prevent the occurrence of charging effects caused by the non-conductive silica substrate. Different doses are chosen during the lithography process depending on the complexities and densities of different chiral designs. A very well defined transmission diffraction pattern from arrays of Peano-Gosper fractals is obtained. The optical activity of these dielectric metamaterials shows great potential in their applications of optoelectronic devices and communications.

Original languageEnglish
Pages (from-to)3714-3717
Number of pages4
JournalThin Solid Films
Volume515
Issue number7-8
DOIs
Publication statusPublished - 26 Feb 2007
Externally publishedYes

Keywords

  • electron beam lithography
  • planar chiral metamaterials
  • polarization state
  • proximity effect

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