Abstract
Characterization of a quantum device structure was performed by high-sensitivity X-ray photoelectron spectroscopy. A semiconductor layer structure grown for the fabrication of resonant tunneling bipolar transistor devices was studied. It is now possible to identify the device layers on the basis of their elemental composition by depth profiling.
| Original language | English |
|---|---|
| Pages (from-to) | 2131-2133 |
| Number of pages | 3 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 20 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Nov 2002 |