High-sensitivity x-ray photoelectron spectroscopy characterization of a quantum device structure

Marie Wintrebert-Fouquet*, K. S A Butcher

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Characterization of a quantum device structure was performed by high-sensitivity X-ray photoelectron spectroscopy. A semiconductor layer structure grown for the fabrication of resonant tunneling bipolar transistor devices was studied. It is now possible to identify the device layers on the basis of their elemental composition by depth profiling.

Original languageEnglish
Pages (from-to)2131-2133
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume20
Issue number6
DOIs
Publication statusPublished - Nov 2002

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