High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

Terry Chien-Jen Yang, Keita Nomoto, Ziyun Lin, Lingfeng Wu, Binesh Puthen-Veettil, Tian Zhang, Xuguang Jia, Gavin Conibeer, Ivan Perez-Wurfl

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)

Abstract

Si quantum dots or interchangeably Si nanocrystals are promising materials for all-Si tandem solar cells in next generation photovoltaics. Si QDs in this study were fabricated by annealing sputtered Si rich oxide/SiO2 (SRO/SiO2) bilayer superlattice thin-films. Advantages of high Si content SRO layers include lower resistivity and higher light absorption cross-sections which are more suitable for photovoltaic devices. However, theoretically high Si content SRO produces greater size distribution and larger Si nanocrystals which in this case slightly lowers the bandgap towards that of crystalline Si. This study investigates the properties of high Si content SRO/SiO2 bilayer superlattice thin-films and the effect of boron and phosphorus doping.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages6
ISBN (Electronic)9781479979448, 9781479979431
DOIs
Publication statusPublished - 2015
Externally publishedYes
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015

Conference

Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period14/06/1519/06/15

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