High temperature excitonic stimulated emission from ZnO epitaxial layers

D. M. Bagnall; Y. F. Chen; Z. Zhu; T. Yao; M. Y. Shen; T. Goto

doi:10.1063/1.122077

High temperature excitonic stimulated emission from ZnO epitaxial layers

D. M. Bagnall^*, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, T. Goto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

842 Citations (Scopus)

Abstract

The emission spectrum of high quality ZnO epilayers is studied from room temperature up to 550 K. At room temperature and low excitation power a single emission peak is observed which may be identified with the free exciton from its peak energy and dependence on temperature. However, when excitation intensities exceed 400 kWcm^-2 a sharp peak emerges at lower energy which we attribute to exciton-exciton scattering. At higher excitation intensities (>800 kWcm^-2) a second stimulated emission peak emerges at even lower energies: we attribute this peak to be stimulated emission of an electron hole plasma. Similar features are observed for all temperatures up to 550 K.

Original language	English
Pages (from-to)	1038-1040
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	8
DOIs	https://doi.org/10.1063/1.122077
Publication status	Published - 24 Aug 1998
Externally published	Yes

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title = "High temperature excitonic stimulated emission from ZnO epitaxial layers",

abstract = "The emission spectrum of high quality ZnO epilayers is studied from room temperature up to 550 K. At room temperature and low excitation power a single emission peak is observed which may be identified with the free exciton from its peak energy and dependence on temperature. However, when excitation intensities exceed 400 kWcm-2 a sharp peak emerges at lower energy which we attribute to exciton-exciton scattering. At higher excitation intensities (>800 kWcm-2) a second stimulated emission peak emerges at even lower energies: we attribute this peak to be stimulated emission of an electron hole plasma. Similar features are observed for all temperatures up to 550 K.",

author = "Bagnall, {D. M.} and Chen, {Y. F.} and Z. Zhu and T. Yao and Shen, {M. Y.} and T. Goto",

year = "1998",

month = aug,

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doi = "10.1063/1.122077",

language = "English",

volume = "73",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - High temperature excitonic stimulated emission from ZnO epitaxial layers

AU - Bagnall, D. M.

AU - Chen, Y. F.

AU - Zhu, Z.

AU - Yao, T.

AU - Shen, M. Y.

AU - Goto, T.

PY - 1998/8/24

Y1 - 1998/8/24

N2 - The emission spectrum of high quality ZnO epilayers is studied from room temperature up to 550 K. At room temperature and low excitation power a single emission peak is observed which may be identified with the free exciton from its peak energy and dependence on temperature. However, when excitation intensities exceed 400 kWcm-2 a sharp peak emerges at lower energy which we attribute to exciton-exciton scattering. At higher excitation intensities (>800 kWcm-2) a second stimulated emission peak emerges at even lower energies: we attribute this peak to be stimulated emission of an electron hole plasma. Similar features are observed for all temperatures up to 550 K.

AB - The emission spectrum of high quality ZnO epilayers is studied from room temperature up to 550 K. At room temperature and low excitation power a single emission peak is observed which may be identified with the free exciton from its peak energy and dependence on temperature. However, when excitation intensities exceed 400 kWcm-2 a sharp peak emerges at lower energy which we attribute to exciton-exciton scattering. At higher excitation intensities (>800 kWcm-2) a second stimulated emission peak emerges at even lower energies: we attribute this peak to be stimulated emission of an electron hole plasma. Similar features are observed for all temperatures up to 550 K.

UR - http://www.scopus.com/inward/record.url?scp=1542713832&partnerID=8YFLogxK

U2 - 10.1063/1.122077

DO - 10.1063/1.122077

M3 - Article

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VL - 73

SP - 1038

EP - 1040

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

ER -

High temperature excitonic stimulated emission from ZnO epitaxial layers

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