High temperature excitonic stimulated emission from ZnO epitaxial layers

D. M. Bagnall*, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, T. Goto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

810 Citations (Scopus)

Abstract

The emission spectrum of high quality ZnO epilayers is studied from room temperature up to 550 K. At room temperature and low excitation power a single emission peak is observed which may be identified with the free exciton from its peak energy and dependence on temperature. However, when excitation intensities exceed 400 kWcm-2 a sharp peak emerges at lower energy which we attribute to exciton-exciton scattering. At higher excitation intensities (>800 kWcm-2) a second stimulated emission peak emerges at even lower energies: we attribute this peak to be stimulated emission of an electron hole plasma. Similar features are observed for all temperatures up to 550 K.

Original languageEnglish
Pages (from-to)1038-1040
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number8
DOIs
Publication statusPublished - 24 Aug 1998
Externally publishedYes

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