High temperature stimulated emission of ZnO grown by plasma assisted molecular beam epitaxy

D. M. Bagnall*, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, T. Goto

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

ZnO grown by plasma enhanced molecular beam epitaxy on (0001) sapphire substrates was found to consist of a 300 nm epitaxial layer with quantum sized pyramids on the surface. Room temperature stimulated emission was observed from these samples with a threshold intensity of 300 kWcm-2. Stimulated emission was observed at 500 K and T0 is found to be around 90 K in the range 300 K to 500 K.

Original languageEnglish
Pages (from-to)243-246
Number of pages4
JournalMolecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics
Volume18
Issue number2-4
Publication statusPublished - 1997
Externally publishedYes

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