High voltage LDMOSFET modeling using BSIM6 as intrinsic-MOS model

Jyoti Ranjan Sahoo, Harshit Agarwal, Chandan Yadav, Pragya Kushwaha, Sourabh Khandelwal, Renaud Gillon, Yogesh Singh Chauhan

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

7 Citations (Scopus)

Abstract

Here, we report high voltage MOSFET modeling using BSIM6 model. The model has two components - intrinsic MOSFET channel of LDMOS modeled by BSIM6 and a drift region modeled by non-linear drift resistance. BSIM6 is the next generation bulk MOSFET model in BSIM family of models. It also have the model of Self Heating Effect (SHE) which is very important for high power devices like LDMOS. This model shows good behaviour over wide range of gate and drain bias conditions including convergence. Some of the effects like Quasi-saturation, self-heating and impact ionization are modelled by the combination of BSIM6 and drift-resistance models. We have validated this model on the simulated characteristics generated by TCAD and then, on the measured characteristics of a LDMOS device, where it shows excellent accuracy over entire bias range.

Original languageEnglish
Title of host publicationProceedings - 2013 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2013
Place of PublicationPiscataway, N.J.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages56-61
Number of pages6
ISBN (Print)9781479927500
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 5th IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2013 - Visakhapatnam, Indonesia
Duration: 19 Dec 201321 Dec 2013

Other

Other2013 5th IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2013
CountryIndonesia
CityVisakhapatnam
Period19/12/1321/12/13

Keywords

  • BSIM6
  • Drift Resistance
  • Lateral Double-Diffused MOS (LDMOS)
  • Self heating Effect

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    Sahoo, J. R., Agarwal, H., Yadav, C., Kushwaha, P., Khandelwal, S., Gillon, R., & Chauhan, Y. S. (2013). High voltage LDMOSFET modeling using BSIM6 as intrinsic-MOS model. In Proceedings - 2013 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2013 (pp. 56-61). Piscataway, N.J.: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/PrimeAsia.2013.6731178