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High voltage LDMOSFET modeling using BSIM6 as intrinsic-MOS model

Jyoti Ranjan Sahoo, Harshit Agarwal, Chandan Yadav, Pragya Kushwaha, Sourabh Khandelwal, Renaud Gillon, Yogesh Singh Chauhan

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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