Hydrogenation passivation of acceptors in MOCVD grown p-INSB

R. J. Egan*, V. W. L. Chin, K. S. A. Butcher, T. L. Tansley

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)


    We report on the effects of hydrogenation of InSb/GaAs epilayers. The asgrown MOCVD InSb is p-type with an acceptor activation energy of 16 meV. The 16 meV impurity, however, is fully passivated during protonation in a hydrogen microwave plasma, revealing a shallower, 2 meV acceptor which appears unaffected by further processing. The material remains p-type after hydrogenation and the Fermi level calculations reveal that the majority carriers over the entire temperature range are holes. The electron to hole mobility ratio is sufficiently large however, that the Hall data shows evidence for an apparent type conversion.

    Original languageEnglish
    Pages (from-to)751-754
    Number of pages4
    JournalSolid State Communications
    Issue number8
    Publication statusPublished - May 1996


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