Hydrogenation passivation of acceptors in MOCVD grown p-INSB

R. J. Egan; V. W. L. Chin; K. S. A. Butcher; T. L. Tansley

doi:10.1016/0038-1098(96)00125-1

Hydrogenation passivation of acceptors in MOCVD grown p-INSB

R. J. Egan^*, V. W. L. Chin, K. S. A. Butcher, T. L. Tansley

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report on the effects of hydrogenation of InSb/GaAs epilayers. The asgrown MOCVD InSb is p-type with an acceptor activation energy of 16 meV. The 16 meV impurity, however, is fully passivated during protonation in a hydrogen microwave plasma, revealing a shallower, 2 meV acceptor which appears unaffected by further processing. The material remains p-type after hydrogenation and the Fermi level calculations reveal that the majority carriers over the entire temperature range are holes. The electron to hole mobility ratio is sufficiently large however, that the Hall data shows evidence for an apparent type conversion.

Original language	English
Pages (from-to)	751-754
Number of pages	4
Journal	Solid State Communications
Volume	98
Issue number	8
DOIs	https://doi.org/10.1016/0038-1098(96)00125-1
Publication status	Published - May 1996

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title = "Hydrogenation passivation of acceptors in MOCVD grown p-INSB",

abstract = "We report on the effects of hydrogenation of InSb/GaAs epilayers. The asgrown MOCVD InSb is p-type with an acceptor activation energy of 16 meV. The 16 meV impurity, however, is fully passivated during protonation in a hydrogen microwave plasma, revealing a shallower, 2 meV acceptor which appears unaffected by further processing. The material remains p-type after hydrogenation and the Fermi level calculations reveal that the majority carriers over the entire temperature range are holes. The electron to hole mobility ratio is sufficiently large however, that the Hall data shows evidence for an apparent type conversion.",

author = "Egan, {R. J.} and Chin, {V. W. L.} and Butcher, {K. S. A.} and Tansley, {T. L.}",

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AU - Egan, R. J.

AU - Chin, V. W. L.

AU - Butcher, K. S. A.

AU - Tansley, T. L.

PY - 1996/5

Y1 - 1996/5

N2 - We report on the effects of hydrogenation of InSb/GaAs epilayers. The asgrown MOCVD InSb is p-type with an acceptor activation energy of 16 meV. The 16 meV impurity, however, is fully passivated during protonation in a hydrogen microwave plasma, revealing a shallower, 2 meV acceptor which appears unaffected by further processing. The material remains p-type after hydrogenation and the Fermi level calculations reveal that the majority carriers over the entire temperature range are holes. The electron to hole mobility ratio is sufficiently large however, that the Hall data shows evidence for an apparent type conversion.

AB - We report on the effects of hydrogenation of InSb/GaAs epilayers. The asgrown MOCVD InSb is p-type with an acceptor activation energy of 16 meV. The 16 meV impurity, however, is fully passivated during protonation in a hydrogen microwave plasma, revealing a shallower, 2 meV acceptor which appears unaffected by further processing. The material remains p-type after hydrogenation and the Fermi level calculations reveal that the majority carriers over the entire temperature range are holes. The electron to hole mobility ratio is sufficiently large however, that the Hall data shows evidence for an apparent type conversion.

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SP - 751

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JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Hydrogenation passivation of acceptors in MOCVD grown p-INSB

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