Ideal GaP/Si heterostructures grown by MOCVD

III-V/active-Si subcells, multijuntions, and MBE-to-MOCVD III-V/Si interface science

S. A. Ringel, J. A. Carlin, T. J. Grassman, B. Galiana, A. M. Carlin, C. Ratcliff, D. Chmielewski, L. Yang, M. J. Mills, Al Mansouri, S. P. Bremner, A. Ho-Baillie, X. Hao, H. Mehrvarz, G. Conibeer, M. A. Green

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

11 Citations (Scopus)

Abstract

High-quality, heterovalent nucleation of defect-free epitaxial GaP on (100)-oriented Si substrates is an enabling accomplishment toward a pathway for the creation of III-V/Si multijunction photovoltaic devices in which the Si growth substrate can simultaneously act as a near-ideal sub-cell through a monolithic metamorphic GaInP/GaAsP/Si structure. While recent efforts have achieved this goal via molecular beam epitaxy (MBE), the science developed in those efforts is fundamental to the GaP/Si interface. Here this knowledge is utilized to achieve the successful transition from MBE to an all-MOCVD (metal-organic chemical vapor deposition) process, in which all nucleation-related defects are simultaneously and totally avoided for ideal GaP/Si interfaces and subsequent metamorphic III-V materials. Four main topics are presented: (1) GaP/Si(100) grown by MOCVD free of antiphase domains and stacking defects; (2) growth, fabrication, and testing of GaP/active-Si sub-cells; (3) MOCVD/MBE-grown GaAsP/active-Si multijunction structures and component cells having target lattice constants and bandgaps for high efficiency dual and triple junction cells, and (4) comparative interface studies of MBE- and MOCVD-grown III-V/GaP/Si cell architectures.

Original languageEnglish
Title of host publication2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages3383-3388
Number of pages6
ISBN (Electronic)9781479932993, 9781479932986
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: 16 Jun 201321 Jun 2013

Publication series

Name
ISSN (Print)0160-8371

Conference

Conference39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period16/06/1321/06/13

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