Identifying a double-energy-level trap center in a GaN HEMT by performing three-stage pulse measurements

Sayed Ali Albahrani, Anthony E. Parker, Michael Heimlich

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The results of measurements performed on a GaN high electron-mobility transistor (HEMT) by two different pulse-measurement techniques are presented. By performing two-stage pulse measurements, two distinct current-injection mechanisms responsible for triggering the trapping process are identified. By performing three-stage pulse measurements, the trap center at which the trapping process occurs is identified to be a double-energy-level trap center, which is a trap center with two distinct energy levels between which there is an interaction. This result has a significant impact on the design of more accurate large signal models for GaN HEMTs.

Original languageEnglish
Article number7533437
Pages (from-to)3693-3699
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume63
Issue number9
DOIs
Publication statusPublished - 1 Sep 2016

Keywords

  • Charge trapping
  • GaN high electron-mobility transistor (HEMT)
  • interaction mechanism
  • microwave FET
  • semiconductor device measurement

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