Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN

E. Valcheva*, T. Paskova, M. V. Abrashev, P. Å O Persson, P. P. Paskov, E. M. Goldys, R. Beccard, M. Heuken, B. Monemar

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN 'template' layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-sectional micro-Raman measurements, cathodoluminescence and transmission electron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier concentration (< 1017 cm-3) as well as a significant strain relaxation effect.

Original languageEnglish
Pages (from-to)35-38
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume82
Issue number1-3
DOIs
Publication statusPublished - 22 May 2001

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