Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN

E. Valcheva; T. Paskova; M. V. Abrashev; P. Å O Persson; P. P. Paskov; E. M. Goldys; R. Beccard; M. Heuken; B. Monemar

doi:10.1016/S0921-5107(00)00676-0

Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN

E. Valcheva^*, T. Paskova, M. V. Abrashev, P. Å O Persson, P. P. Paskov, E. M. Goldys, R. Beccard, M. Heuken, B. Monemar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN 'template' layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-sectional micro-Raman measurements, cathodoluminescence and transmission electron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier concentration (< 10¹⁷ cm^-3) as well as a significant strain relaxation effect.

Original language	English
Pages (from-to)	35-38
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	82
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00676-0
Publication status	Published - 22 May 2001

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Valcheva, E., Paskova, T., Abrashev, M. V., Persson, P. Å. O., Paskov, P. P., Goldys, E. M., Beccard, R., Heuken, M., & Monemar, B. (2001). Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 82(1-3), 35-38. https://doi.org/10.1016/S0921-5107(00)00676-0

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title = "Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN",

abstract = "Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN 'template' layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-sectional micro-Raman measurements, cathodoluminescence and transmission electron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier concentration (< 1017 cm-3) as well as a significant strain relaxation effect.",

author = "E. Valcheva and T. Paskova and Abrashev, {M. V.} and Persson, {P. {\AA} O} and Paskov, {P. P.} and Goldys, {E. M.} and R. Beccard and M. Heuken and B. Monemar",

year = "2001",

month = may,

day = "22",

doi = "10.1016/S0921-5107(00)00676-0",

language = "English",

volume = "82",

pages = "35--38",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

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}

Valcheva, E, Paskova, T, Abrashev, MV, Persson, PÅO, Paskov, PP, Goldys, EM, Beccard, R, Heuken, M & Monemar, B 2001, 'Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 82, no. 1-3, pp. 35-38. https://doi.org/10.1016/S0921-5107(00)00676-0

Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN. / Valcheva, E.; Paskova, T.; Abrashev, M. V. et al.
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 82, No. 1-3, 22.05.2001, p. 35-38.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN

AU - Valcheva, E.

AU - Paskova, T.

AU - Abrashev, M. V.

AU - Persson, P. Å O

AU - Paskov, P. P.

AU - Goldys, E. M.

AU - Beccard, R.

AU - Heuken, M.

AU - Monemar, B.

PY - 2001/5/22

Y1 - 2001/5/22

N2 - Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN 'template' layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-sectional micro-Raman measurements, cathodoluminescence and transmission electron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier concentration (< 1017 cm-3) as well as a significant strain relaxation effect.

AB - Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN 'template' layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-sectional micro-Raman measurements, cathodoluminescence and transmission electron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier concentration (< 1017 cm-3) as well as a significant strain relaxation effect.

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U2 - 10.1016/S0921-5107(00)00676-0

DO - 10.1016/S0921-5107(00)00676-0

M3 - Article

AN - SCOPUS:0035933208

SN - 0921-5107

VL - 82

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JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -

Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN

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