Impact of p-GaN layer doping on switching performance of enhancement mode GaN devices

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

5 Citations (Scopus)

Abstract

Enhancement type p-GaN HEMT devices are desirable in power converter circuits for a failsafe operation. The gate capacitance of these devices decreases for higher gate bias due to junction capacitance of the Schottky metallp-GaN junction. It is important to capture this effect in simulation model. To this end, for the first time, we present a depletion approximation based analytical model which effectively models this effect in the device. Using device electrostatics at the p-GaN/AlGaN junction in conjunction with physics-based Advanced Spice Model for High Electron Mobility Transistor (ASM-HEMT) as the core, we model the effect of doping in p-GaN layer in the GaN devices. We studied this device phenomenon and its effects on the performance of the switching characteristics of enhancement mode GaN power devices.

Original languageEnglish
Title of host publication2018 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-4
Number of pages4
ISBN (Electronic)9781538655412
ISBN (Print)9781538655429
DOIs
Publication statusPublished - 2018
Event19th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2018 - Padova, Italy
Duration: 25 Jun 201828 Jun 2018

Conference

Conference19th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2018
CountryItaly
CityPadova
Period25/06/1828/06/18

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