Impact of parasitic capacitance and ferroelectric parameters on negative capacitance FinFET characteristics

Sourabh Khandelwal; Juan Pablo Duarte; Asif Islam Khan; Sayeef Salahuddin; Chenming Hu

doi:10.1109/LED.2016.2628349

Impact of parasitic capacitance and ferroelectric parameters on negative capacitance FinFET characteristics

Sourabh Khandelwal^*, Juan Pablo Duarte, Asif Islam Khan, Sayeef Salahuddin, Chenming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

75 Citations (Scopus)

Abstract

In this letter, we present a compact model and analyze the impact of key parameters on negative capacitance FinFET (NC-FinFET) device operation. The developed model solves FinFET device electrostatics and Landau-Khalatnikov equations self-consistently. An experimental NC-FinFET device is accurately modeled and the experimentally calibrated parameters are used to analyze the NC-FinFETs device performance and its dependence on several key parameters.

Original language	English
Pages (from-to)	142-144
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	38
Issue number	1
DOIs	https://doi.org/10.1109/LED.2016.2628349
Publication status	Published - Jan 2017
Externally published	Yes

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title = "Impact of parasitic capacitance and ferroelectric parameters on negative capacitance FinFET characteristics",

abstract = "In this letter, we present a compact model and analyze the impact of key parameters on negative capacitance FinFET (NC-FinFET) device operation. The developed model solves FinFET device electrostatics and Landau-Khalatnikov equations self-consistently. An experimental NC-FinFET device is accurately modeled and the experimentally calibrated parameters are used to analyze the NC-FinFETs device performance and its dependence on several key parameters.",

author = "Sourabh Khandelwal and Duarte, {Juan Pablo} and Khan, {Asif Islam} and Sayeef Salahuddin and Chenming Hu",

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AU - Khandelwal, Sourabh

AU - Duarte, Juan Pablo

AU - Khan, Asif Islam

AU - Salahuddin, Sayeef

AU - Hu, Chenming

PY - 2017/1

Y1 - 2017/1

N2 - In this letter, we present a compact model and analyze the impact of key parameters on negative capacitance FinFET (NC-FinFET) device operation. The developed model solves FinFET device electrostatics and Landau-Khalatnikov equations self-consistently. An experimental NC-FinFET device is accurately modeled and the experimentally calibrated parameters are used to analyze the NC-FinFETs device performance and its dependence on several key parameters.

AB - In this letter, we present a compact model and analyze the impact of key parameters on negative capacitance FinFET (NC-FinFET) device operation. The developed model solves FinFET device electrostatics and Landau-Khalatnikov equations self-consistently. An experimental NC-FinFET device is accurately modeled and the experimentally calibrated parameters are used to analyze the NC-FinFETs device performance and its dependence on several key parameters.

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DO - 10.1109/LED.2016.2628349

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JO - IEEE Electron Device Letters

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Impact of parasitic capacitance and ferroelectric parameters on negative capacitance FinFET characteristics

Abstract

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