Impact of parasitic capacitance and ferroelectric parameters on negative capacitance FinFET characteristics

Sourabh Khandelwal*, Juan Pablo Duarte, Asif Islam Khan, Sayeef Salahuddin, Chenming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

In this letter, we present a compact model and analyze the impact of key parameters on negative capacitance FinFET (NC-FinFET) device operation. The developed model solves FinFET device electrostatics and Landau-Khalatnikov equations self-consistently. An experimental NC-FinFET device is accurately modeled and the experimentally calibrated parameters are used to analyze the NC-FinFETs device performance and its dependence on several key parameters.

Original languageEnglish
Pages (from-to)142-144
Number of pages3
JournalIEEE Electron Device Letters
Volume38
Issue number1
DOIs
Publication statusPublished - Jan 2017
Externally publishedYes

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