Impact of the pulse-amplifier slew-rate on the pulsed-IV measurement of GaN HEMTs

Sayed A. Albahrani, Anthony E. Parker

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

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Abstract

The influence of the non-ideal response of the pulse-amplifier on the trap and self-heating dynamics, and hence, on the drain-current transient in a GaN HEMT is studied with new trap and self-heating models. It is shown that the study of the trap and self-heating dynamics requires a proper correction technique that accounts for the change in trap-potential, trap time-constant and thermal response due to the non-ideal response of the pulse-amplifier. Several post-measurement data correction techniques are discussed and shown to be incapable of predicting the true drain-current transient. A pre-measurement terminal correction technique using a new version of the pulse measurement system is used to solve the problem.

Original languageEnglish
Title of host publication75th ARFTG Microwave Measurement Conference: Measurement of Modulated Signals for Communications
Place of PublicationPiscataway, N.J.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-7
Number of pages7
ISBN (Electronic)9781424463664, 9781424463657
ISBN (Print)9781424463640
DOIs
Publication statusPublished - May 2010
Event75th ARFTG Microwave Measurement Conference: Measurement of Modulated Signals for Communications - Anaheim, CA, United States
Duration: 28 May 201028 May 2010

Other

Other75th ARFTG Microwave Measurement Conference: Measurement of Modulated Signals for Communications
CountryUnited States
CityAnaheim, CA
Period28/05/1028/05/10

Bibliographical note

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