Impact of the semiconductor diode structure on the virtual local oscillator leakage of GaAs sub-harmonic mixers

Venkata Gutta*, Anthony E. Parker, Anthony Fattorini

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)
19 Downloads (Pure)

Abstract

Diode mismatch in an anti-parallel diode mixer results in an unwanted virtual leakage at twice the local oscillator pumping frequency. Random variability in a fabrication process is one of the sources of diode mismatch. In some fabrication processes, a diode usually consists of a transistor with source and drain shorted together. The layout of this structure introduces a systematic source of diode mismatch. An informed selection of the fabrication process is crucial in minimizing the systematic source of diode mismatch and improving the virtual local oscillator leakage.

Original languageEnglish
Title of host publicationIMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest
EditorsMark Gouker, Larry Kushner
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1509-1512
Number of pages4
ISBN (Electronic)9781424428045
ISBN (Print)9781424428038
DOIs
Publication statusPublished - Jun 2009
Event2009 IEEE MTT-S International Microwave Symposium, IMS - 2009 - Boston, United States
Duration: 7 Jun 200912 Jun 2009

Other

Other2009 IEEE MTT-S International Microwave Symposium, IMS - 2009
CountryUnited States
CityBoston
Period7/06/0912/06/09

Bibliographical note

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