Impact of the semiconductor diode structure on the virtual local oscillator leakage of GaAs sub-harmonic mixers

Venkata Gutta; Anthony E. Parker; Anthony Fattorini

doi:10.1109/MWSYM.2009.5165995

Impact of the semiconductor diode structure on the virtual local oscillator leakage of GaAs sub-harmonic mixers

Venkata Gutta^*, Anthony E. Parker, Anthony Fattorini

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

139 Downloads (Pure)

Abstract

Diode mismatch in an anti-parallel diode mixer results in an unwanted virtual leakage at twice the local oscillator pumping frequency. Random variability in a fabrication process is one of the sources of diode mismatch. In some fabrication processes, a diode usually consists of a transistor with source and drain shorted together. The layout of this structure introduces a systematic source of diode mismatch. An informed selection of the fabrication process is crucial in minimizing the systematic source of diode mismatch and improving the virtual local oscillator leakage.

Original language	English
Title of host publication	IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest
Editors	Mark Gouker, Larry Kushner
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1509-1512
Number of pages	4
ISBN (Electronic)	9781424428045
ISBN (Print)	9781424428038
DOIs	https://doi.org/10.1109/MWSYM.2009.5165995
Publication status	Published - Jun 2009
Event	2009 IEEE MTT-S International Microwave Symposium, IMS - 2009 - Boston, United States Duration: 7 Jun 2009 → 12 Jun 2009

Other

Other	2009 IEEE MTT-S International Microwave Symposium, IMS - 2009
Country/Territory	United States
City	Boston
Period	7/06/09 → 12/06/09

Bibliographical note

Copyright 2010 IEEE. Reprinted from 2009 IEEE MTT-S International Microwave Symposium digest : 7-12 June, Boston Convention & Exhibition Center. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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Gutta, V., Parker, A. E., & Fattorini, A. (2009). Impact of the semiconductor diode structure on the virtual local oscillator leakage of GaAs sub-harmonic mixers. In M. Gouker, & L. Kushner (Eds.), IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest (pp. 1509-1512). Article 5165995 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/MWSYM.2009.5165995

Gutta, Venkata ; Parker, Anthony E. ; Fattorini, Anthony. / Impact of the semiconductor diode structure on the virtual local oscillator leakage of GaAs sub-harmonic mixers. IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest. editor / Mark Gouker ; Larry Kushner. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2009. pp. 1509-1512

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abstract = "Diode mismatch in an anti-parallel diode mixer results in an unwanted virtual leakage at twice the local oscillator pumping frequency. Random variability in a fabrication process is one of the sources of diode mismatch. In some fabrication processes, a diode usually consists of a transistor with source and drain shorted together. The layout of this structure introduces a systematic source of diode mismatch. An informed selection of the fabrication process is crucial in minimizing the systematic source of diode mismatch and improving the virtual local oscillator leakage.",

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note = "Copyright 2010 IEEE. Reprinted from 2009 IEEE MTT-S International Microwave Symposium digest : 7-12 June, Boston Convention \& Exhibition Center. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University{\^a}€{\texttrademark}s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.; 2009 IEEE MTT-S International Microwave Symposium, IMS - 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

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Gutta, V, Parker, AE & Fattorini, A 2009, Impact of the semiconductor diode structure on the virtual local oscillator leakage of GaAs sub-harmonic mixers. in M Gouker & L Kushner (eds), IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest., 5165995, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1509-1512, 2009 IEEE MTT-S International Microwave Symposium, IMS - 2009, Boston, Massachusetts, United States, 7/06/09. https://doi.org/10.1109/MWSYM.2009.5165995

Impact of the semiconductor diode structure on the virtual local oscillator leakage of GaAs sub-harmonic mixers. / Gutta, Venkata; Parker, Anthony E.; Fattorini, Anthony.
IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest. ed. / Mark Gouker; Larry Kushner. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2009. p. 1509-1512 5165995.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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N1 - Copyright 2010 IEEE. Reprinted from 2009 IEEE MTT-S International Microwave Symposium digest : 7-12 June, Boston Convention & Exhibition Center. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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Gutta V, Parker AE, Fattorini A. Impact of the semiconductor diode structure on the virtual local oscillator leakage of GaAs sub-harmonic mixers. In Gouker M, Kushner L, editors, IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2009. p. 1509-1512. 5165995 doi: 10.1109/MWSYM.2009.5165995

Impact of the semiconductor diode structure on the virtual local oscillator leakage of GaAs sub-harmonic mixers

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