Implantation of labelled single nitrogen vacancy centers in diamond using 15N

J. R. Rabeau; P. Reichart; G. Tamanyan; D. N. Jamieson; S. Prawer; F. Jelezko; T. Gaebel; I. Popa; M. Domhan; J. Wrachtrup

doi:10.1063/1.2158700

Implantation of labelled single nitrogen vacancy centers in diamond using ¹⁵N

J. R. Rabeau^*, P. Reichart, G. Tamanyan, D. N. Jamieson, S. Prawer, F. Jelezko, T. Gaebel, I. Popa, M. Domhan, J. Wrachtrup

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

194 Citations (Scopus)

Abstract

Nitrogen-vacancy (NV-) color centers in diamond were created by implantation of 7 keV N 15 (I=12) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of single NV- centers. The hyperfine spectrum from NV-15 arising from implanted N15 can be distinguished from NV-14 centers created by native N 14 (I=1) sites. Analysis indicates 1 in 40 implanted N15 atoms give rise to an optically observable NV-15 center. This report ultimately demonstrates a mechanism by which the yield of NV- center formation by nitrogen implantation can be measured.

Original language	English
Article number	023113
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	2
DOIs	https://doi.org/10.1063/1.2158700
Publication status	Published - 2006
Externally published	Yes

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title = "Implantation of labelled single nitrogen vacancy centers in diamond using 15N",

abstract = "Nitrogen-vacancy (NV-) color centers in diamond were created by implantation of 7 keV N 15 (I=12) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of single NV- centers. The hyperfine spectrum from NV-15 arising from implanted N15 can be distinguished from NV-14 centers created by native N 14 (I=1) sites. Analysis indicates 1 in 40 implanted N15 atoms give rise to an optically observable NV-15 center. This report ultimately demonstrates a mechanism by which the yield of NV- center formation by nitrogen implantation can be measured.",

author = "Rabeau, \{J. R.\} and P. Reichart and G. Tamanyan and Jamieson, \{D. N.\} and S. Prawer and F. Jelezko and T. Gaebel and I. Popa and M. Domhan and J. Wrachtrup",

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doi = "10.1063/1.2158700",

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T1 - Implantation of labelled single nitrogen vacancy centers in diamond using 15N

AU - Rabeau, J. R.

AU - Reichart, P.

AU - Tamanyan, G.

AU - Jamieson, D. N.

AU - Prawer, S.

AU - Jelezko, F.

AU - Gaebel, T.

AU - Popa, I.

AU - Domhan, M.

AU - Wrachtrup, J.

PY - 2006

Y1 - 2006

N2 - Nitrogen-vacancy (NV-) color centers in diamond were created by implantation of 7 keV N 15 (I=12) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of single NV- centers. The hyperfine spectrum from NV-15 arising from implanted N15 can be distinguished from NV-14 centers created by native N 14 (I=1) sites. Analysis indicates 1 in 40 implanted N15 atoms give rise to an optically observable NV-15 center. This report ultimately demonstrates a mechanism by which the yield of NV- center formation by nitrogen implantation can be measured.

AB - Nitrogen-vacancy (NV-) color centers in diamond were created by implantation of 7 keV N 15 (I=12) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of single NV- centers. The hyperfine spectrum from NV-15 arising from implanted N15 can be distinguished from NV-14 centers created by native N 14 (I=1) sites. Analysis indicates 1 in 40 implanted N15 atoms give rise to an optically observable NV-15 center. This report ultimately demonstrates a mechanism by which the yield of NV- center formation by nitrogen implantation can be measured.

UR - https://www.scopus.com/pages/publications/30844458591

U2 - 10.1063/1.2158700

DO - 10.1063/1.2158700

M3 - Article

AN - SCOPUS:30844458591

SN - 0003-6951

VL - 88

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023113

ER -

Implantation of labelled single nitrogen vacancy centers in diamond using ¹⁵N

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