Implication of baseband impedance and bias for FET amplifier linearization

James Brinkhoff*, Anthony E. Parker

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Baseband impedance can have a positive or negative effect on the intermodulation of microwave circuits. Concise formulae are shown to be useful to a designer to select intelligently a FET and its bias on the basis of the impact of baseband impedance on intermodulation. Memoryless predistortion techniques are shown to be effective over wide bandwidths at a suitable bias.

Original languageEnglish
Pages (from-to)781-784
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
Publication statusPublished - 2003

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