Implications of carrier mobility limitations for GaAs as an x-ray detector

S. M. Grant*, Timothy J. Sumner, J. P. Warren, D. Alexiev, K. S. Butcher

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

Theoretically, gallium arsenide detectors offer an attractive alternative to silicon for the high energy x- ray astronomer, due to the greater absorption power of the material. However, in practice, GaAs detectors made from bulk-grown crystals have a spectral resolution which falls well short of both expectation and that achieved by silicon detectors of comparable thickness. In contrast, a detector fabricated from GaAs grown by the liquid phase epitaxial (LPE) process displays full charge collection with a resolution in agreement with that expected from measurements of leakage current and device capacitance. Experimental results are presented showing the level of spectral resolution possible in a variety of GaAs detectors, including Liquid Enhancement Czochralski material from various manufacturers, Vertical Bridgeman and LPE material. Both the detector performance and the electrical characteristics (voltage-current, noise, etc) have been explored for each device.

Original languageEnglish
Title of host publicationEUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IV
Subtitle of host publicationProceedings of SPIE
EditorsOswald H. Siegmund
Place of PublicationBellingham, WA
PublisherSPIE
Pages40-50
Number of pages11
Volume2006
ISBN (Print)0819412554
DOIs
Publication statusPublished - 1993
Externally publishedYes
EventEUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IV - San Diego, CA, USA
Duration: 11 Jul 199312 Jul 1993

Other

OtherEUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IV
CitySan Diego, CA, USA
Period11/07/9312/07/93

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