Abstract
Theoretically, gallium arsenide detectors offer an attractive alternative to silicon for the high energy x- ray astronomer, due to the greater absorption power of the material. However, in practice, GaAs detectors made from bulk-grown crystals have a spectral resolution which falls well short of both expectation and that achieved by silicon detectors of comparable thickness. In contrast, a detector fabricated from GaAs grown by the liquid phase epitaxial (LPE) process displays full charge collection with a resolution in agreement with that expected from measurements of leakage current and device capacitance. Experimental results are presented showing the level of spectral resolution possible in a variety of GaAs detectors, including Liquid Enhancement Czochralski material from various manufacturers, Vertical Bridgeman and LPE material. Both the detector performance and the electrical characteristics (voltage-current, noise, etc) have been explored for each device.
Original language | English |
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Title of host publication | EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IV |
Subtitle of host publication | Proceedings of SPIE |
Editors | Oswald H. Siegmund |
Place of Publication | Bellingham, WA |
Publisher | SPIE |
Pages | 40-50 |
Number of pages | 11 |
Volume | 2006 |
ISBN (Print) | 0819412554 |
DOIs | |
Publication status | Published - 1993 |
Externally published | Yes |
Event | EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IV - San Diego, CA, USA Duration: 11 Jul 1993 → 12 Jul 1993 |
Other
Other | EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IV |
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City | San Diego, CA, USA |
Period | 11/07/93 → 12/07/93 |