Improved charge modeling of field-plate enhanced AlGaN/GaN HEMT devices using a physics based compact model

Kevin Kellogg; Sourabh Khandelwal; Neil Craig; Larry Dunleavy

doi:10.1109/BCICTS.2018.8550951

Improved charge modeling of field-plate enhanced AlGaN/GaN HEMT devices using a physics based compact model

Kevin Kellogg, Sourabh Khandelwal, Neil Craig, Larry Dunleavy

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

6 Citations (Scopus)

Abstract

In this paper, we present a detailed analysis on the impact of the presence of gate connected field-plate towards the source contact (GFP-S) on the high-frequency performance of GaN based high-electron mobility transistors (GaN HEMTs). We have developed an accurate physics-based model for GFP-S by enhancing the recent industry standard Advance SPICE Model for GaN HEMTs. It is found that GFP-S affects the non-linear capacitance of GaN HEMTs, thereby impacting small-and large-signal RF performance of these devices. A modification of the ASM model is described that captures these effects. The modified model is validated with measured data on a GFP-S GaN HEMT device.

Original language	English
Title of host publication	2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	102-105
Number of pages	4
ISBN (Electronic)	9781538665022, 9781538665015
ISBN (Print)	9781538665039
DOIs	https://doi.org/10.1109/BCICTS.2018.8550951
Publication status	Published - 2018
Event	2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 - San Diego, United States Duration: 15 Oct 2018 → 17 Oct 2018

Conference

Conference	2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
Country/Territory	United States
City	San Diego
Period	15/10/18 → 17/10/18

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10.1109/BCICTS.2018.8550951

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Kellogg, K., Khandelwal, S., Craig, N., & Dunleavy, L. (2018). Improved charge modeling of field-plate enhanced AlGaN/GaN HEMT devices using a physics based compact model. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (pp. 102-105). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/BCICTS.2018.8550951

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title = "Improved charge modeling of field-plate enhanced AlGaN/GaN HEMT devices using a physics based compact model",

abstract = "In this paper, we present a detailed analysis on the impact of the presence of gate connected field-plate towards the source contact (GFP-S) on the high-frequency performance of GaN based high-electron mobility transistors (GaN HEMTs). We have developed an accurate physics-based model for GFP-S by enhancing the recent industry standard Advance SPICE Model for GaN HEMTs. It is found that GFP-S affects the non-linear capacitance of GaN HEMTs, thereby impacting small-and large-signal RF performance of these devices. A modification of the ASM model is described that captures these effects. The modified model is validated with measured data on a GFP-S GaN HEMT device.",

author = "Kevin Kellogg and Sourabh Khandelwal and Neil Craig and Larry Dunleavy",

year = "2018",

doi = "10.1109/BCICTS.2018.8550951",

language = "English",

isbn = "9781538665039",

pages = "102--105",

booktitle = "2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 ; Conference date: 15-10-2018 Through 17-10-2018",

}

Kellogg, K, Khandelwal, S, Craig, N & Dunleavy, L 2018, Improved charge modeling of field-plate enhanced AlGaN/GaN HEMT devices using a physics based compact model. in 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 102-105, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018, San Diego, United States, 15/10/18. https://doi.org/10.1109/BCICTS.2018.8550951

Improved charge modeling of field-plate enhanced AlGaN/GaN HEMT devices using a physics based compact model. / Kellogg, Kevin; Khandelwal, Sourabh; Craig, Neil et al.
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2018. p. 102-105.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Craig, Neil

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N2 - In this paper, we present a detailed analysis on the impact of the presence of gate connected field-plate towards the source contact (GFP-S) on the high-frequency performance of GaN based high-electron mobility transistors (GaN HEMTs). We have developed an accurate physics-based model for GFP-S by enhancing the recent industry standard Advance SPICE Model for GaN HEMTs. It is found that GFP-S affects the non-linear capacitance of GaN HEMTs, thereby impacting small-and large-signal RF performance of these devices. A modification of the ASM model is described that captures these effects. The modified model is validated with measured data on a GFP-S GaN HEMT device.

AB - In this paper, we present a detailed analysis on the impact of the presence of gate connected field-plate towards the source contact (GFP-S) on the high-frequency performance of GaN based high-electron mobility transistors (GaN HEMTs). We have developed an accurate physics-based model for GFP-S by enhancing the recent industry standard Advance SPICE Model for GaN HEMTs. It is found that GFP-S affects the non-linear capacitance of GaN HEMTs, thereby impacting small-and large-signal RF performance of these devices. A modification of the ASM model is described that captures these effects. The modified model is validated with measured data on a GFP-S GaN HEMT device.

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BT - 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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Kellogg K, Khandelwal S, Craig N, Dunleavy L. Improved charge modeling of field-plate enhanced AlGaN/GaN HEMT devices using a physics based compact model. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2018. p. 102-105 doi: 10.1109/BCICTS.2018.8550951

Improved charge modeling of field-plate enhanced AlGaN/GaN HEMT devices using a physics based compact model

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