Improved charge modeling of field-plate enhanced AlGaN/GaN HEMT devices using a physics based compact model

Kevin Kellogg, Sourabh Khandelwal, Neil Craig, Larry Dunleavy

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

4 Citations (Scopus)

Abstract

In this paper, we present a detailed analysis on the impact of the presence of gate connected field-plate towards the source contact (GFP-S) on the high-frequency performance of GaN based high-electron mobility transistors (GaN HEMTs). We have developed an accurate physics-based model for GFP-S by enhancing the recent industry standard Advance SPICE Model for GaN HEMTs. It is found that GFP-S affects the non-linear capacitance of GaN HEMTs, thereby impacting small-and large-signal RF performance of these devices. A modification of the ASM model is described that captures these effects. The modified model is validated with measured data on a GFP-S GaN HEMT device.

Original languageEnglish
Title of host publication2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages102-105
Number of pages4
ISBN (Electronic)9781538665022, 9781538665015
ISBN (Print)9781538665039
DOIs
Publication statusPublished - 2018
Event2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 - San Diego, United States
Duration: 15 Oct 201817 Oct 2018

Conference

Conference2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
CountryUnited States
CitySan Diego
Period15/10/1817/10/18

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