Improvements in the dielectric properties of aluminium nitride through passivation

K. S A Butcher; T. L. Tansley

doi:10.1109/SIM.2000.939198

Improvements in the dielectric properties of aluminium nitride through passivation

K. S A Butcher, T. L. Tansley

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

Poly-crystalline and amorphous AlN is susceptible to oxidation via the large surface area presented by intergranular voids and vacancies. Here we present measurements of the electrical properties of metal-insulator-metal AlN based structures that show marked improvement in dielectric breakdown and I-V characteristics following the application of various passivation strategies that prevent surface oxidation. Breakdown fields of >100 MV/m have been achieved and up to four orders of magnitude reduction in current density. Frequency dependent dielectric constant and dielectric loss measurements are also presented.

Original language	English
Title of host publication	2000 International Semiconducting and Insulating Materials Conference, SIMC 2000
Place of Publication	Canberra
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	59-62
Number of pages	4
Volume	2000-January
ISBN (Electronic)	0780358147
DOIs	https://doi.org/10.1109/SIM.2000.939198
Publication status	Published - 2000
Event	11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia Duration: 3 Jul 2000 → 7 Jul 2000

Other

Other	11th International Semiconducting and Insulating Materials Conference, SIMC 2000
Country/Territory	Australia
City	Canberra
Period	3/07/00 → 7/07/00

Keywords

Aluminum
Amorphous materials
Dielectric breakdown
Dielectric constant
Dielectric loss measurement
Dielectric measurements
Electric variables measurement
Metal-insulator structures
Oxidation
Passivation

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10.1109/SIM.2000.939198

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title = "Improvements in the dielectric properties of aluminium nitride through passivation",

abstract = "Poly-crystalline and amorphous AlN is susceptible to oxidation via the large surface area presented by intergranular voids and vacancies. Here we present measurements of the electrical properties of metal-insulator-metal AlN based structures that show marked improvement in dielectric breakdown and I-V characteristics following the application of various passivation strategies that prevent surface oxidation. Breakdown fields of >100 MV/m have been achieved and up to four orders of magnitude reduction in current density. Frequency dependent dielectric constant and dielectric loss measurements are also presented.",

keywords = "Aluminum, Amorphous materials, Dielectric breakdown, Dielectric constant, Dielectric loss measurement, Dielectric measurements, Electric variables measurement, Metal-insulator structures, Oxidation, Passivation",

author = "Butcher, {K. S A} and Tansley, {T. L.}",

year = "2000",

doi = "10.1109/SIM.2000.939198",

language = "English",

volume = "2000-January",

pages = "59--62",

booktitle = "2000 International Semiconducting and Insulating Materials Conference, SIMC 2000",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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note = "11th International Semiconducting and Insulating Materials Conference, SIMC 2000 ; Conference date: 03-07-2000 Through 07-07-2000",

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Butcher, KSA & Tansley, TL 2000, Improvements in the dielectric properties of aluminium nitride through passivation. in 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000. vol. 2000-January, 939198, Institute of Electrical and Electronics Engineers (IEEE), Canberra, pp. 59-62, 11th International Semiconducting and Insulating Materials Conference, SIMC 2000, Canberra, Australia, 3/07/00. https://doi.org/10.1109/SIM.2000.939198

Improvements in the dielectric properties of aluminium nitride through passivation. / Butcher, K. S A; Tansley, T. L.
2000 International Semiconducting and Insulating Materials Conference, SIMC 2000. Vol. 2000-January Canberra: Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 59-62 939198.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Improvements in the dielectric properties of aluminium nitride through passivation

AU - Butcher, K. S A

AU - Tansley, T. L.

PY - 2000

Y1 - 2000

N2 - Poly-crystalline and amorphous AlN is susceptible to oxidation via the large surface area presented by intergranular voids and vacancies. Here we present measurements of the electrical properties of metal-insulator-metal AlN based structures that show marked improvement in dielectric breakdown and I-V characteristics following the application of various passivation strategies that prevent surface oxidation. Breakdown fields of >100 MV/m have been achieved and up to four orders of magnitude reduction in current density. Frequency dependent dielectric constant and dielectric loss measurements are also presented.

AB - Poly-crystalline and amorphous AlN is susceptible to oxidation via the large surface area presented by intergranular voids and vacancies. Here we present measurements of the electrical properties of metal-insulator-metal AlN based structures that show marked improvement in dielectric breakdown and I-V characteristics following the application of various passivation strategies that prevent surface oxidation. Breakdown fields of >100 MV/m have been achieved and up to four orders of magnitude reduction in current density. Frequency dependent dielectric constant and dielectric loss measurements are also presented.

KW - Aluminum

KW - Amorphous materials

KW - Dielectric breakdown

KW - Dielectric constant

KW - Dielectric loss measurement

KW - Dielectric measurements

KW - Electric variables measurement

KW - Metal-insulator structures

KW - Oxidation

KW - Passivation

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U2 - 10.1109/SIM.2000.939198

DO - 10.1109/SIM.2000.939198

M3 - Conference proceeding contribution

AN - SCOPUS:84950106314

VL - 2000-January

SP - 59

EP - 62

BT - 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Canberra

T2 - 11th International Semiconducting and Insulating Materials Conference, SIMC 2000

Y2 - 3 July 2000 through 7 July 2000

ER -

Improvements in the dielectric properties of aluminium nitride through passivation

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