In-depth analysis of characteristics for an edge disordered sub-10 nm armchair graphene nanoribbon field effect transistor

Asif Hassan; Mehnaz Tabassum; Abu Shakil Ahmed; Tasnim Sultana

doi:10.1109/icaeee.2018.8642969

In-depth analysis of characteristics for an edge disordered sub-10 nm armchair graphene nanoribbon field effect transistor

Asif Hassan, Mehnaz Tabassum, Abu Shakil Ahmed, Tasnim Sultana

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

Graphene nanoribbon is a probable alternative in observing transistor behavior due to its semiconducting properties. One of the fruitful investigations in transistor research is I-V characteristics by using proper bias voltage, in presence of capacitance. In this paper, we will observe the I-V characteristics of Armchair Graphene Nanoribbon (AGNR) by considering the quantum as well as the classical capacitance for two different sizes of AGNR which are 5.04nm and 10.20nm. These two cases will eventually help us concluding a valuable decision in sub-10 nm range based device analysis.

Original language	English
Title of host publication	2018 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE)
Place of Publication	USA
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	4
ISBN (Electronic)	9781538682524
ISBN (Print)	9781538682531
DOIs	https://doi.org/10.1109/icaeee.2018.8642969
Publication status	Published - Nov 2018
Externally published	Yes
Event	2018 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE 2018) - Gazipur, Bangladesh Duration: 22 Nov 2018 → 24 Nov 2018

Conference

Conference	2018 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE 2018)
Country/Territory	Bangladesh
City	Gazipur
Period	22/11/18 → 24/11/18

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10.1109/icaeee.2018.8642969

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Hassan, A., Tabassum, M., Ahmed, A. S., & Sultana, T. (2018). In-depth analysis of characteristics for an edge disordered sub-10 nm armchair graphene nanoribbon field effect transistor. In 2018 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE) Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/icaeee.2018.8642969

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title = "In-depth analysis of characteristics for an edge disordered sub-10 nm armchair graphene nanoribbon field effect transistor",

abstract = "Graphene nanoribbon is a probable alternative in observing transistor behavior due to its semiconducting properties. One of the fruitful investigations in transistor research is I-V characteristics by using proper bias voltage, in presence of capacitance. In this paper, we will observe the I-V characteristics of Armchair Graphene Nanoribbon (AGNR) by considering the quantum as well as the classical capacitance for two different sizes of AGNR which are 5.04nm and 10.20nm. These two cases will eventually help us concluding a valuable decision in sub-10 nm range based device analysis.",

author = "Asif Hassan and Mehnaz Tabassum and Ahmed, {Abu Shakil} and Tasnim Sultana",

year = "2018",

month = nov,

doi = "10.1109/icaeee.2018.8642969",

language = "English",

isbn = "9781538682531",

booktitle = "2018 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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note = "2018 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE 2018) ; Conference date: 22-11-2018 Through 24-11-2018",

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Hassan, A, Tabassum, M, Ahmed, AS & Sultana, T 2018, In-depth analysis of characteristics for an edge disordered sub-10 nm armchair graphene nanoribbon field effect transistor. in 2018 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE). Institute of Electrical and Electronics Engineers (IEEE), USA, 2018 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE 2018), Gazipur, Bangladesh, 22/11/18. https://doi.org/10.1109/icaeee.2018.8642969

In-depth analysis of characteristics for an edge disordered sub-10 nm armchair graphene nanoribbon field effect transistor. / Hassan, Asif; Tabassum, Mehnaz; Ahmed, Abu Shakil et al.
2018 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE). USA: Institute of Electrical and Electronics Engineers (IEEE), 2018.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - In-depth analysis of characteristics for an edge disordered sub-10 nm armchair graphene nanoribbon field effect transistor

AU - Hassan, Asif

AU - Tabassum, Mehnaz

AU - Ahmed, Abu Shakil

AU - Sultana, Tasnim

PY - 2018/11

Y1 - 2018/11

N2 - Graphene nanoribbon is a probable alternative in observing transistor behavior due to its semiconducting properties. One of the fruitful investigations in transistor research is I-V characteristics by using proper bias voltage, in presence of capacitance. In this paper, we will observe the I-V characteristics of Armchair Graphene Nanoribbon (AGNR) by considering the quantum as well as the classical capacitance for two different sizes of AGNR which are 5.04nm and 10.20nm. These two cases will eventually help us concluding a valuable decision in sub-10 nm range based device analysis.

AB - Graphene nanoribbon is a probable alternative in observing transistor behavior due to its semiconducting properties. One of the fruitful investigations in transistor research is I-V characteristics by using proper bias voltage, in presence of capacitance. In this paper, we will observe the I-V characteristics of Armchair Graphene Nanoribbon (AGNR) by considering the quantum as well as the classical capacitance for two different sizes of AGNR which are 5.04nm and 10.20nm. These two cases will eventually help us concluding a valuable decision in sub-10 nm range based device analysis.

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DO - 10.1109/icaeee.2018.8642969

M3 - Conference proceeding contribution

SN - 9781538682531

BT - 2018 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - USA

T2 - 2018 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE 2018)

Y2 - 22 November 2018 through 24 November 2018

ER -

In-depth analysis of characteristics for an edge disordered sub-10 nm armchair graphene nanoribbon field effect transistor

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