In-depth and in-plane profiling of light emission properties of InGaN-based laser diode

M. Godlewski; E. M. Goldys; M. R. Phillips; T. Böttcher; S. Figge; D. Hommel; R. Czernecki; P. Prystawko; M. Leszczynski; P. Perlin; I. Grzegory; S. Porowski

In-depth and in-plane profiling of light emission properties of InGaN-based laser diode

M. Godlewski^*, E. M. Goldys, M. R. Phillips, T. Böttcher, S. Figge, D. Hommel, R. Czernecki, P. Prystawko, M. Leszczynski, P. Perlin, I. Grzegory, S. Porowski

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We employ cathodoluminescence (CL) technique for evaluation of in-depth and in-plane instabilities of light emission in laser diode structure. We study light emission properties from laser structure and their relation to microstructure details. Large in-plane instabilities of light emission are also present for excitation densities, larger than the threshold densities for the stimulated emission, i.e., potential fluctuations are not fully screened in the active region of the laser even at large excitation densities.

Original language	English
Pages (from-to)	207-211
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	201
Issue number	2
Publication status	Published - Jan 2004

Cite this

@article{e21a4755f5804b9b91ccea5ca83e6ffb,

title = "In-depth and in-plane profiling of light emission properties of InGaN-based laser diode",

abstract = "We employ cathodoluminescence (CL) technique for evaluation of in-depth and in-plane instabilities of light emission in laser diode structure. We study light emission properties from laser structure and their relation to microstructure details. Large in-plane instabilities of light emission are also present for excitation densities, larger than the threshold densities for the stimulated emission, i.e., potential fluctuations are not fully screened in the active region of the laser even at large excitation densities.",

author = "M. Godlewski and Goldys, {E. M.} and Phillips, {M. R.} and T. B{\"o}ttcher and S. Figge and D. Hommel and R. Czernecki and P. Prystawko and M. Leszczynski and P. Perlin and I. Grzegory and S. Porowski",

year = "2004",

month = jan,

language = "English",

volume = "201",

pages = "207--211",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH, Wiley",

number = "2",

}

In-depth and in-plane profiling of light emission properties of InGaN-based laser diode. / Godlewski, M.; Goldys, E. M.; Phillips, M. R.; Böttcher, T.; Figge, S.; Hommel, D.; Czernecki, R.; Prystawko, P.; Leszczynski, M.; Perlin, P.; Grzegory, I.; Porowski, S.

In: Physica Status Solidi (A) Applied Research, Vol. 201, No. 2, 01.2004, p. 207-211.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - In-depth and in-plane profiling of light emission properties of InGaN-based laser diode

AU - Godlewski, M.

AU - Goldys, E. M.

AU - Phillips, M. R.

AU - Böttcher, T.

AU - Figge, S.

AU - Hommel, D.

AU - Czernecki, R.

AU - Prystawko, P.

AU - Leszczynski, M.

AU - Perlin, P.

AU - Grzegory, I.

AU - Porowski, S.

PY - 2004/1

Y1 - 2004/1

N2 - We employ cathodoluminescence (CL) technique for evaluation of in-depth and in-plane instabilities of light emission in laser diode structure. We study light emission properties from laser structure and their relation to microstructure details. Large in-plane instabilities of light emission are also present for excitation densities, larger than the threshold densities for the stimulated emission, i.e., potential fluctuations are not fully screened in the active region of the laser even at large excitation densities.

AB - We employ cathodoluminescence (CL) technique for evaluation of in-depth and in-plane instabilities of light emission in laser diode structure. We study light emission properties from laser structure and their relation to microstructure details. Large in-plane instabilities of light emission are also present for excitation densities, larger than the threshold densities for the stimulated emission, i.e., potential fluctuations are not fully screened in the active region of the laser even at large excitation densities.

UR - http://www.scopus.com/inward/record.url?scp=10744225668&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:10744225668

VL - 201

SP - 207

EP - 211

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 2

ER -

In-depth and in-plane profiling of light emission properties of InGaN-based laser diode

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