In-depth and in-plane profiling of light emission properties of InGaN-based laser diode

M. Godlewski; E. M. Goldys; M. R. Phillips; T. Böttcher; S. Figge; D. Hommel; R. Czernecki; P. Prystawko; M. Leszczynski; P. Perlin; I. Grzegory; S. Porowski

In-depth and in-plane profiling of light emission properties of InGaN-based laser diode

M. Godlewski^*, E. M. Goldys, M. R. Phillips, T. Böttcher, S. Figge, D. Hommel, R. Czernecki, P. Prystawko, M. Leszczynski, P. Perlin, I. Grzegory, S. Porowski

^*Corresponding author for this work

Department of Physics and Astronomy

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

We employ cathodoluminescence (CL) technique for evaluation of in-depth and in-plane instabilities of light emission in laser diode structure. We study light emission properties from laser structure and their relation to microstructure details. Large in-plane instabilities of light emission are also present for excitation densities, larger than the threshold densities for the stimulated emission, i.e., potential fluctuations are not fully screened in the active region of the laser even at large excitation densities.

Original language	English
Pages (from-to)	207-211
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	201
Issue number	2
Publication status	Published - Jan 2004

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Godlewski, M., Goldys, E. M., Phillips, M. R., Böttcher, T., Figge, S., Hommel, D., ... Porowski, S. (2004). In-depth and in-plane profiling of light emission properties of InGaN-based laser diode. Physica Status Solidi (A) Applied Research, 201(2), 207-211.

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title = "In-depth and in-plane profiling of light emission properties of InGaN-based laser diode",

abstract = "We employ cathodoluminescence (CL) technique for evaluation of in-depth and in-plane instabilities of light emission in laser diode structure. We study light emission properties from laser structure and their relation to microstructure details. Large in-plane instabilities of light emission are also present for excitation densities, larger than the threshold densities for the stimulated emission, i.e., potential fluctuations are not fully screened in the active region of the laser even at large excitation densities.",

author = "M. Godlewski and Goldys, {E. M.} and Phillips, {M. R.} and T. B{\"o}ttcher and S. Figge and D. Hommel and R. Czernecki and P. Prystawko and M. Leszczynski and P. Perlin and I. Grzegory and S. Porowski",

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In-depth and in-plane profiling of light emission properties of InGaN-based laser diode. / Godlewski, M.; Goldys, E. M.; Phillips, M. R.; Böttcher, T.; Figge, S.; Hommel, D.; Czernecki, R.; Prystawko, P.; Leszczynski, M.; Perlin, P.; Grzegory, I.; Porowski, S.

In: Physica Status Solidi (A) Applied Research, Vol. 201, No. 2, 01.2004, p. 207-211.

Research output: Contribution to journal › Article

TY - JOUR

T1 - In-depth and in-plane profiling of light emission properties of InGaN-based laser diode

AU - Godlewski, M.

AU - Goldys, E. M.

AU - Phillips, M. R.

AU - Böttcher, T.

AU - Figge, S.

AU - Hommel, D.

AU - Czernecki, R.

AU - Prystawko, P.

AU - Leszczynski, M.

AU - Perlin, P.

AU - Grzegory, I.

AU - Porowski, S.

PY - 2004/1

Y1 - 2004/1

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AB - We employ cathodoluminescence (CL) technique for evaluation of in-depth and in-plane instabilities of light emission in laser diode structure. We study light emission properties from laser structure and their relation to microstructure details. Large in-plane instabilities of light emission are also present for excitation densities, larger than the threshold densities for the stimulated emission, i.e., potential fluctuations are not fully screened in the active region of the laser even at large excitation densities.

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M3 - Article

VL - 201

SP - 207

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JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

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