In-depth and in-plane profiling of light emission properties of InGaN-based laser diode

M. Godlewski*, E. M. Goldys, M. R. Phillips, T. Böttcher, S. Figge, D. Hommel, R. Czernecki, P. Prystawko, M. Leszczynski, P. Perlin, I. Grzegory, S. Porowski

*Corresponding author for this work

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Abstract

We employ cathodoluminescence (CL) technique for evaluation of in-depth and in-plane instabilities of light emission in laser diode structure. We study light emission properties from laser structure and their relation to microstructure details. Large in-plane instabilities of light emission are also present for excitation densities, larger than the threshold densities for the stimulated emission, i.e., potential fluctuations are not fully screened in the active region of the laser even at large excitation densities.

Original languageEnglish
Pages (from-to)207-211
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number2
Publication statusPublished - Jan 2004

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    Godlewski, M., Goldys, E. M., Phillips, M. R., Böttcher, T., Figge, S., Hommel, D., ... Porowski, S. (2004). In-depth and in-plane profiling of light emission properties of InGaN-based laser diode. Physica Status Solidi (A) Applied Research, 201(2), 207-211.