In-plane and in-depth nonuniformities in defect distribution in GaN and InGaN epilayers

M. Godlewski*, E. M. Goldys, G. Pozina, B. Monemar, K. Pakula, J. M. Baranowski, P. Prystawko, M. Leszczynski

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The in-plane and in-depth characteristics of the GaN and InGaN epilayers grown by the metalorganic chemical vapour deposition (MOCVD) on three different substrates (sapphire, SiC and bulk GaN) are evaluated. Relatively large intensity fluctuations of "edge" GaN and InGaN emissions are observed and are related to the details of the micro-structure of the GaN and InGaN films studied. The experiments indicate a nonuniform defect distribution in all types of the MOCVD films studied. In particular, the decoration of structural defects with impurities, an increased defect accumulation at the interfaces and a surprisingly small influence of the micro-structure on the in-plane homogeneity of the yellow band cathodoluminescence emission are observed.

Original languageEnglish
Pages (from-to)102-105
Number of pages4
JournalPhysica B: Condensed Matter
Volume308-310
DOIs
Publication statusPublished - Dec 2001

Keywords

  • Defects distribution
  • Gan
  • InGaN

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