InAs FinFETs performance enhancement by superacid surface treatment

Yuping Zeng; Sourabh Khandelwal; Kazy F. Shariar; Zijian Wang; Guangyang Lin; Qi Cheng; Peng Cui; Robert Opila; Ganesh Balakrishnan; Sadhvikas Addamane; Peyman Taheri; Daisuke Kiriya; Mark Hettick; Ali Javey

doi:10.1109/TED.2019.2901281

InAs FinFETs performance enhancement by superacid surface treatment

Yuping Zeng, Sourabh Khandelwal, Kazy F. Shariar^*, Zijian Wang, Guangyang Lin, Qi Cheng, Peng Cui, Robert Opila, Ganesh Balakrishnan, Sadhvikas Addamane, Peyman Taheri, Daisuke Kiriya, Mark Hettick, Ali Javey

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

In this paper, a post superacid (SA) treatment was proposed to enhance the performance of InAs FinFETs on SiO₂/Si substrates. Typically, the subthreshold swing (SS) has reduced from 217 to 170 mV/decade and the transconductance (g_m) has increased from 6.44 to 26.5 μS/μm after SA treatment. It was found that the interfacial In₂O₃ at the InAs/ZrO₂ interface was effectively reduced after SA treatment due to the strong protonating nature of the SA solution. As a result, the interface trap density was reduced leading to a pronounced reduction of sheet resistance after SA treatment. The modeling of transfer characteristics indicates that the carrier mobility is enhanced by 5.87.1 folds after SA treatment due to interfacial traps reduction. The results suggest that SA treatment can be potentially extended to other III-V MOSFETs to enhance the device performances.

Original language	English
Pages (from-to)	1856-1861
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	4
DOIs	https://doi.org/10.1109/TED.2019.2901281
Publication status	Published - Apr 2019

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title = "InAs FinFETs performance enhancement by superacid surface treatment",

abstract = "In this paper, a post superacid (SA) treatment was proposed to enhance the performance of InAs FinFETs on SiO2/Si substrates. Typically, the subthreshold swing (SS) has reduced from 217 to 170 mV/decade and the transconductance (gm) has increased from 6.44 to 26.5 μS/μm after SA treatment. It was found that the interfacial In2O3 at the InAs/ZrO2 interface was effectively reduced after SA treatment due to the strong protonating nature of the SA solution. As a result, the interface trap density was reduced leading to a pronounced reduction of sheet resistance after SA treatment. The modeling of transfer characteristics indicates that the carrier mobility is enhanced by 5.87.1 folds after SA treatment due to interfacial traps reduction. The results suggest that SA treatment can be potentially extended to other III-V MOSFETs to enhance the device performances.",

author = "Yuping Zeng and Sourabh Khandelwal and Shariar, {Kazy F.} and Zijian Wang and Guangyang Lin and Qi Cheng and Peng Cui and Robert Opila and Ganesh Balakrishnan and Sadhvikas Addamane and Peyman Taheri and Daisuke Kiriya and Mark Hettick and Ali Javey",

year = "2019",

month = apr,

doi = "10.1109/TED.2019.2901281",

language = "English",

volume = "66",

pages = "1856--1861",

journal = "IEEE Transactions on Electron Devices",

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TY - JOUR

T1 - InAs FinFETs performance enhancement by superacid surface treatment

AU - Zeng, Yuping

AU - Khandelwal, Sourabh

AU - Shariar, Kazy F.

AU - Wang, Zijian

AU - Lin, Guangyang

AU - Cheng, Qi

AU - Cui, Peng

AU - Opila, Robert

AU - Balakrishnan, Ganesh

AU - Addamane, Sadhvikas

AU - Taheri, Peyman

AU - Kiriya, Daisuke

AU - Hettick, Mark

AU - Javey, Ali

PY - 2019/4

Y1 - 2019/4

N2 - In this paper, a post superacid (SA) treatment was proposed to enhance the performance of InAs FinFETs on SiO2/Si substrates. Typically, the subthreshold swing (SS) has reduced from 217 to 170 mV/decade and the transconductance (gm) has increased from 6.44 to 26.5 μS/μm after SA treatment. It was found that the interfacial In2O3 at the InAs/ZrO2 interface was effectively reduced after SA treatment due to the strong protonating nature of the SA solution. As a result, the interface trap density was reduced leading to a pronounced reduction of sheet resistance after SA treatment. The modeling of transfer characteristics indicates that the carrier mobility is enhanced by 5.87.1 folds after SA treatment due to interfacial traps reduction. The results suggest that SA treatment can be potentially extended to other III-V MOSFETs to enhance the device performances.

AB - In this paper, a post superacid (SA) treatment was proposed to enhance the performance of InAs FinFETs on SiO2/Si substrates. Typically, the subthreshold swing (SS) has reduced from 217 to 170 mV/decade and the transconductance (gm) has increased from 6.44 to 26.5 μS/μm after SA treatment. It was found that the interfacial In2O3 at the InAs/ZrO2 interface was effectively reduced after SA treatment due to the strong protonating nature of the SA solution. As a result, the interface trap density was reduced leading to a pronounced reduction of sheet resistance after SA treatment. The modeling of transfer characteristics indicates that the carrier mobility is enhanced by 5.87.1 folds after SA treatment due to interfacial traps reduction. The results suggest that SA treatment can be potentially extended to other III-V MOSFETs to enhance the device performances.

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U2 - 10.1109/TED.2019.2901281

DO - 10.1109/TED.2019.2901281

M3 - Article

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VL - 66

SP - 1856

EP - 1861

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 4

ER -

InAs FinFETs performance enhancement by superacid surface treatment

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