Increased efficiency of high-beam quality extraction from a copper vapor laser with H2–Ne admixtures

Michael J. Withford; Daniel J.W. Brown; David W. Coutts; James A. Piper

doi:10.1109/3.375935

Increased efficiency of high-beam quality extraction from a copper vapor laser with H₂–Ne admixtures

Michael J. Withford, Daniel J.W. Brown, David W. Coutts, James A. Piper

Research output: Contribution to journal › Article

18 Citations (Scopus)

Abstract

We report results of a detailed study investigating the effects of hydrogen additive on the generation of high-beam quality output from a copper vapor laser. Increases up to 390% were observed for the power extracted in the high-beam quality component of laser output, however, the power of the low beam quality output remained relatively unchanged. We attribute these results to modification of the spatio-temporal characteristics of the laser gain with added H2.

Original language	English
Pages (from-to)	898-902
Number of pages	5
Journal	IEEE Journal of Quantum Electronics
Volume	31
Issue number	5
DOIs	https://doi.org/10.1109/3.375935
Publication status	Published - 1995

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Bibliographical note

Copyright 1995 IEEE. Reprinted from IEEE journal of quantum electronics. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Keywords

OUTPUT CHARACTERISTICS
HYDROGEN
POWER

Cite this

Withford, M. J., Brown, D. J. W., Coutts, D. W., & Piper, J. A. (1995). Increased efficiency of high-beam quality extraction from a copper vapor laser with H₂–Ne admixtures. IEEE Journal of Quantum Electronics, 31(5), 898-902. https://doi.org/10.1109/3.375935

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