Indium nitride emerges

K. Scott A. Butcher; Marie Wintrebert-Fouquet; Patrick P. -T. Chen; Trevor L. Tansley; Surapon Srikeaw; Santosh K. Shrestha; R. G. Elliman; Heiko Timmers

Indium nitride emerges

K. Scott A. Butcher, Marie Wintrebert-Fouquet, Patrick P. -T. Chen, Trevor L. Tansley, Surapon Srikeaw, Santosh K. Shrestha, R. G. Elliman, Heiko Timmers

Department of Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

Abstract

Because of its high mobility, indium nitride is emerging as a “hot” material for potential application in nitride based high power, high frequency transistor devices. The best quality indium nitride ever grown was produced at Macquarie University in the early 1980’s by RF sputtering. The belief since that time has been that the background n-type carrier concentration of this sputtered material is due to nitrogen vacancies. Using measurements made by Elastic Recoil Detection analysis, with an incident beam of 200 MeV Au ions, it is shown that this material is actually grown nitrogen rich with the nitrogen on indium anti-site defect being the most probable origin of the high n-type conductivity commonly observed. Raman measurements confirm the revised model.

Original language	English
Title of host publication	Physics and industry working together
Subtitle of host publication	proceedings of the Australian Institute of Physics 15th Biennial Congress 2002
Editors	David Neilson
Place of Publication	Adelaide
Publisher	Causal Productions
Pages	340-342
Number of pages	3
ISBN (Print)	095980644X
Publication status	Published - 2002
Event	Australian Institute of Physics National Congress (15th : 2002) - Sydney Duration: 8 Jul 2002 → 11 Jul 2002

Conference

Conference	Australian Institute of Physics National Congress (15th : 2002)
City	Sydney
Period	8/07/02 → 11/07/02

Access to Document

http://www.pems.adfa.edu.au/~s9471553/level1/pdffiles/InN_AIP.pdf

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Butcher, K. Scott A. ; Wintrebert-Fouquet, Marie ; Chen, Patrick P. -T. ; Tansley, Trevor L. ; Srikeaw, Surapon ; Shrestha, Santosh K. ; Elliman, R. G. ; Timmers, Heiko. / Indium nitride emerges. Physics and industry working together: proceedings of the Australian Institute of Physics 15th Biennial Congress 2002. editor / David Neilson. Adelaide : Causal Productions, 2002. pp. 340-342

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title = "Indium nitride emerges",

abstract = "Because of its high mobility, indium nitride is emerging as a “hot” material for potential application in nitride based high power, high frequency transistor devices. The best quality indium nitride ever grown was produced at Macquarie University in the early 1980’s by RF sputtering. The belief since that time has been that the background n-type carrier concentration of this sputtered material is due to nitrogen vacancies. Using measurements made by Elastic Recoil Detection analysis, with an incident beam of 200 MeV Au ions, it is shown that this material is actually grown nitrogen rich with the nitrogen on indium anti-site defect being the most probable origin of the high n-type conductivity commonly observed. Raman measurements confirm the revised model.",

author = "Butcher, {K. Scott A.} and Marie Wintrebert-Fouquet and Chen, {Patrick P. -T.} and Tansley, {Trevor L.} and Surapon Srikeaw and Shrestha, {Santosh K.} and Elliman, {R. G.} and Heiko Timmers",

year = "2002",

language = "English",

isbn = "095980644X",

pages = "340--342",

editor = "David Neilson",

booktitle = "Physics and industry working together",

publisher = "Causal Productions",

}

Butcher, KSA, Wintrebert-Fouquet, M, Chen, PP-T, Tansley, TL, Srikeaw, S, Shrestha, SK, Elliman, RG & Timmers, H 2002, Indium nitride emerges. in D Neilson (ed.), Physics and industry working together: proceedings of the Australian Institute of Physics 15th Biennial Congress 2002. Causal Productions, Adelaide, pp. 340-342, Australian Institute of Physics National Congress (15th : 2002), Sydney, 8/07/02.

Indium nitride emerges. / Butcher, K. Scott A.; Wintrebert-Fouquet, Marie; Chen, Patrick P. -T.; Tansley, Trevor L.; Srikeaw, Surapon; Shrestha, Santosh K.; Elliman, R. G.; Timmers, Heiko.

Physics and industry working together: proceedings of the Australian Institute of Physics 15th Biennial Congress 2002. ed. / David Neilson. Adelaide : Causal Productions, 2002. p. 340-342.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - Indium nitride emerges

AU - Butcher, K. Scott A.

AU - Wintrebert-Fouquet, Marie

AU - Chen, Patrick P. -T.

AU - Tansley, Trevor L.

AU - Srikeaw, Surapon

AU - Shrestha, Santosh K.

AU - Elliman, R. G.

AU - Timmers, Heiko

PY - 2002

Y1 - 2002

N2 - Because of its high mobility, indium nitride is emerging as a “hot” material for potential application in nitride based high power, high frequency transistor devices. The best quality indium nitride ever grown was produced at Macquarie University in the early 1980’s by RF sputtering. The belief since that time has been that the background n-type carrier concentration of this sputtered material is due to nitrogen vacancies. Using measurements made by Elastic Recoil Detection analysis, with an incident beam of 200 MeV Au ions, it is shown that this material is actually grown nitrogen rich with the nitrogen on indium anti-site defect being the most probable origin of the high n-type conductivity commonly observed. Raman measurements confirm the revised model.

AB - Because of its high mobility, indium nitride is emerging as a “hot” material for potential application in nitride based high power, high frequency transistor devices. The best quality indium nitride ever grown was produced at Macquarie University in the early 1980’s by RF sputtering. The belief since that time has been that the background n-type carrier concentration of this sputtered material is due to nitrogen vacancies. Using measurements made by Elastic Recoil Detection analysis, with an incident beam of 200 MeV Au ions, it is shown that this material is actually grown nitrogen rich with the nitrogen on indium anti-site defect being the most probable origin of the high n-type conductivity commonly observed. Raman measurements confirm the revised model.

M3 - Conference proceeding contribution

SN - 095980644X

SP - 340

EP - 342

BT - Physics and industry working together

A2 - Neilson, David

PB - Causal Productions

CY - Adelaide

ER -