Indium nitride emerges

K. Scott A. Butcher, Marie Wintrebert-Fouquet, Patrick P. -T. Chen, Trevor L. Tansley, Surapon Srikeaw, Santosh K. Shrestha, R. G. Elliman, Heiko Timmers

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

Because of its high mobility, indium nitride is emerging as a “hot” material for potential application in nitride based high power, high frequency transistor devices. The best quality indium nitride ever grown was produced at Macquarie University in the early 1980’s by RF sputtering. The belief since that time has been that the background n-type carrier concentration of this sputtered material is due to nitrogen vacancies. Using measurements made by Elastic Recoil Detection analysis, with an incident beam of 200 MeV Au ions, it is shown that this material is actually grown nitrogen rich with the nitrogen on indium anti-site defect being the most probable origin of the high n-type conductivity commonly observed. Raman measurements confirm the revised model.
Original languageEnglish
Title of host publicationPhysics and industry working together
Subtitle of host publicationproceedings of the Australian Institute of Physics 15th Biennial Congress 2002
EditorsDavid Neilson
Place of PublicationAdelaide
PublisherCausal Productions
Pages340-342
Number of pages3
ISBN (Print)095980644X
Publication statusPublished - 2002
EventAustralian Institute of Physics National Congress (15th : 2002) - Sydney
Duration: 8 Jul 200211 Jul 2002

Conference

ConferenceAustralian Institute of Physics National Congress (15th : 2002)
CitySydney
Period8/07/0211/07/02

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