Influence of dielectric passivation layer thickness on LeTID in multicrystalline silicon

Utkarshaa Varshney; Malcolm D. Abbott; Shaoyang Liu; Daniel Chen; Moonyong Kim; Chandany Sen; David N. R. Payne; Stuart R. Wenham; Bram Hoex; Catherine Chan

doi:10.1109/PVSC.2018.8547618

Influence of dielectric passivation layer thickness on LeTID in multicrystalline silicon

Utkarshaa Varshney, Malcolm D. Abbott, Shaoyang Liu, Daniel Chen, Moonyong Kim, Chandany Sen, David N. R. Payne, Stuart R. Wenham, Bram Hoex, Catherine Chan

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

8 Citations (Scopus)

Abstract

Hydrogen released from surface passivation layers during high-temperature firing plays a crucial role in surface and bulk defect passivation, particularly in multicrystalline silicon solar cells. However, recent studies have identified hydrogen as a possible catalyst to activate recombination within silicon. This work demonstrates the varying rate and extent of LeTID observed in multicrystalline silicon solar wafers that occurs by modulating the thickness of plasma deposited SiN_x:H films. In this study, we show that thicker SiN_x:H layers cause a faster rate of degradation and a higher maximum normalized defect density. We interpret this result as important evidence for the role of hydrogen in inducing LeTID in multicrystalline silicon.

Original language	English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	363-367
Number of pages	5
ISBN (Electronic)	9781538685297
ISBN (Print)	9781538685303
DOIs	https://doi.org/10.1109/PVSC.2018.8547618
Publication status	Published - 2018
Externally published	Yes
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018

Publication series

Name
ISSN (Print)	0160-8371

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	10/06/18 → 15/06/18

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10.1109/PVSC.2018.8547618

Cite this

Varshney, U., Abbott, M. D., Liu, S., Chen, D., Kim, M., Sen, C., Payne, D. N. R., Wenham, S. R., Hoex, B., & Chan, C. (2018). Influence of dielectric passivation layer thickness on LeTID in multicrystalline silicon. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC) (pp. 363-367). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/PVSC.2018.8547618

Varshney, Utkarshaa ; Abbott, Malcolm D. ; Liu, Shaoyang et al. / Influence of dielectric passivation layer thickness on LeTID in multicrystalline silicon. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2018. pp. 363-367

@inproceedings{51add703132a45bf8205d3df04addc0a,

title = "Influence of dielectric passivation layer thickness on LeTID in multicrystalline silicon",

abstract = "Hydrogen released from surface passivation layers during high-temperature firing plays a crucial role in surface and bulk defect passivation, particularly in multicrystalline silicon solar cells. However, recent studies have identified hydrogen as a possible catalyst to activate recombination within silicon. This work demonstrates the varying rate and extent of LeTID observed in multicrystalline silicon solar wafers that occurs by modulating the thickness of plasma deposited SiNx:H films. In this study, we show that thicker SiNx:H layers cause a faster rate of degradation and a higher maximum normalized defect density. We interpret this result as important evidence for the role of hydrogen in inducing LeTID in multicrystalline silicon.",

author = "Utkarshaa Varshney and Abbott, {Malcolm D.} and Shaoyang Liu and Daniel Chen and Moonyong Kim and Chandany Sen and Payne, {David N. R.} and Wenham, {Stuart R.} and Bram Hoex and Catherine Chan",

year = "2018",

doi = "10.1109/PVSC.2018.8547618",

language = "English",

isbn = "9781538685303",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "363--367",

booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC)",

address = "United States",

note = "7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

}

Varshney, U, Abbott, MD, Liu, S, Chen, D, Kim, M, Sen, C, Payne, DNR, Wenham, SR, Hoex, B & Chan, C 2018, Influence of dielectric passivation layer thickness on LeTID in multicrystalline silicon. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 363-367, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10/06/18. https://doi.org/10.1109/PVSC.2018.8547618

Influence of dielectric passivation layer thickness on LeTID in multicrystalline silicon. / Varshney, Utkarshaa; Abbott, Malcolm D.; Liu, Shaoyang et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2018. p. 363-367.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Influence of dielectric passivation layer thickness on LeTID in multicrystalline silicon

AU - Varshney, Utkarshaa

AU - Abbott, Malcolm D.

AU - Liu, Shaoyang

AU - Chen, Daniel

AU - Kim, Moonyong

AU - Sen, Chandany

AU - Payne, David N. R.

AU - Wenham, Stuart R.

AU - Hoex, Bram

AU - Chan, Catherine

PY - 2018

Y1 - 2018

N2 - Hydrogen released from surface passivation layers during high-temperature firing plays a crucial role in surface and bulk defect passivation, particularly in multicrystalline silicon solar cells. However, recent studies have identified hydrogen as a possible catalyst to activate recombination within silicon. This work demonstrates the varying rate and extent of LeTID observed in multicrystalline silicon solar wafers that occurs by modulating the thickness of plasma deposited SiNx:H films. In this study, we show that thicker SiNx:H layers cause a faster rate of degradation and a higher maximum normalized defect density. We interpret this result as important evidence for the role of hydrogen in inducing LeTID in multicrystalline silicon.

AB - Hydrogen released from surface passivation layers during high-temperature firing plays a crucial role in surface and bulk defect passivation, particularly in multicrystalline silicon solar cells. However, recent studies have identified hydrogen as a possible catalyst to activate recombination within silicon. This work demonstrates the varying rate and extent of LeTID observed in multicrystalline silicon solar wafers that occurs by modulating the thickness of plasma deposited SiNx:H films. In this study, we show that thicker SiNx:H layers cause a faster rate of degradation and a higher maximum normalized defect density. We interpret this result as important evidence for the role of hydrogen in inducing LeTID in multicrystalline silicon.

UR - http://www.scopus.com/inward/record.url?scp=85059893763&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8547618

DO - 10.1109/PVSC.2018.8547618

M3 - Conference proceeding contribution

AN - SCOPUS:85059893763

SN - 9781538685303

SP - 363

EP - 367

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

Varshney U, Abbott MD, Liu S, Chen D, Kim M, Sen C et al. Influence of dielectric passivation layer thickness on LeTID in multicrystalline silicon. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2018. p. 363-367 doi: 10.1109/PVSC.2018.8547618

Influence of dielectric passivation layer thickness on LeTID in multicrystalline silicon

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