Influence of dielectric passivation layer thickness on LeTID in multicrystalline silicon

Utkarshaa Varshney, Malcolm D. Abbott, Shaoyang Liu, Daniel Chen, Moonyong Kim, Chandany Sen, David N. R. Payne, Stuart R. Wenham, Bram Hoex, Catherine Chan

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

Hydrogen released from surface passivation layers during high-temperature firing plays a crucial role in surface and bulk defect passivation, particularly in multicrystalline silicon solar cells. However, recent studies have identified hydrogen as a possible catalyst to activate recombination within silicon. This work demonstrates the varying rate and extent of LeTID observed in multicrystalline silicon solar wafers that occurs by modulating the thickness of plasma deposited SiNx:H films. In this study, we show that thicker SiNx:H layers cause a faster rate of degradation and a higher maximum normalized defect density. We interpret this result as important evidence for the role of hydrogen in inducing LeTID in multicrystalline silicon.

Original languageEnglish
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages363-367
Number of pages5
ISBN (Electronic)9781538685297
ISBN (Print)9781538685303
DOIs
Publication statusPublished - 2018
Externally publishedYes
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018

Publication series

Name
ISSN (Print)0160-8371

Conference

Conference7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
CountryUnited States
CityWaikoloa Village
Period10/06/1815/06/18

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