Influence of growth rate on the structure of thick GaN layers grown by HVPE

Engineering & Materials Science

• Photoluminescence 100%
• X ray diffraction 60%
• Vapor phase epitaxy 54%
• Sapphire 41%
• Crystal structure 39%
• Thick films 37%
• Surface morphology 34%
• Crystalline materials 32%
• Crystals 30%
• Thin films 29%

Chemistry

• Vapor Phase Epitaxy 32%
• Photoluminescence 31%
• X-Ray Diffraction 20%
• Surface 19%
• Hydride 17%
• Buffer Solution 13%
• Crystal Structure 10%
• Liquid Film 9%

Physics & Astronomy

• photoluminescence 14%
• diffraction 10%
• vapor phase epitaxy 10%
• hydrides 10%
• thick films 9%
• x rays 9%
• sapphire 8%
• buffers 8%
• crystal structure 8%
• thin films 5%
• crystals 4%