Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

M. Godlewski*, V. Yu Ivanov, E. Łusakowska, R. Boźek, S. Masojedovas, S. Juršénas, K. Kazlauskas, A. Žukauskas, E. M. Goldys, M. R. Phillips, T. Böttcher, S. Figge, D. Hommel

*Corresponding author for this work

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4 Citations (Scopus)

Abstract

Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed.

Original languageEnglish
Pages (from-to)1056-1059
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume2
Issue number3
DOIs
Publication statusPublished - 2005

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    Godlewski, M., Ivanov, V. Y., Łusakowska, E., Boźek, R., Masojedovas, S., Juršénas, S., ... Hommel, D. (2005). Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures. Physica Status Solidi C: Conferences, 2(3), 1056-1059. https://doi.org/10.1002/pssc.200460619