Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

M. Godlewski*, V. Yu Ivanov, E. Łusakowska, R. Boźek, S. Masojedovas, S. Juršénas, K. Kazlauskas, A. Žukauskas, E. M. Goldys, M. R. Phillips, T. Böttcher, S. Figge, D. Hommel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed.

Original languageEnglish
Pages (from-to)1056-1059
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume2
Issue number3
DOIs
Publication statusPublished - 2005

Fingerprint Dive into the research topics of 'Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures'. Together they form a unique fingerprint.

Cite this