Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

M. Godlewski; V. Yu Ivanov; E. Łusakowska; R. Boźek; S. Masojedovas; S. Juršénas; K. Kazlauskas; A. Žukauskas; E. M. Goldys; M. R. Phillips; T. Böttcher; S. Figge; D. Hommel

doi:10.1002/pssc.200460619

Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

M. Godlewski^*, V. Yu Ivanov, E. Łusakowska, R. Boźek, S. Masojedovas, S. Juršénas, K. Kazlauskas, A. Žukauskas, E. M. Goldys, M. R. Phillips, T. Böttcher, S. Figge, D. Hommel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed.

Original language	English
Pages (from-to)	1056-1059
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	3
DOIs	https://doi.org/10.1002/pssc.200460619
Publication status	Published - 2005

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10.1002/pssc.200460619

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Godlewski, M., Ivanov, V. Y., Łusakowska, E., Boźek, R., Masojedovas, S., Juršénas, S., Kazlauskas, K., Žukauskas, A., Goldys, E. M., Phillips, M. R., Böttcher, T., Figge, S., & Hommel, D. (2005). Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures. Physica Status Solidi C: Conferences, 2(3), 1056-1059. https://doi.org/10.1002/pssc.200460619

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title = "Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures",

abstract = "Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed.",

author = "M. Godlewski and Ivanov, \{V. Yu\} and E. {\L}usakowska and R. Bo{\'z}ek and S. Masojedovas and S. Jur{\v s}{\'e}nas and K. Kazlauskas and A. {\v Z}ukauskas and Goldys, \{E. M.\} and Phillips, \{M. R.\} and T. B{\"o}ttcher and S. Figge and D. Hommel",

year = "2005",

doi = "10.1002/pssc.200460619",

language = "English",

volume = "2",

pages = "1056--1059",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH, Wiley",

number = "3",

}

Godlewski, M, Ivanov, VY, Łusakowska, E, Boźek, R, Masojedovas, S, Juršénas, S, Kazlauskas, K, Žukauskas, A, Goldys, EM, Phillips, MR, Böttcher, T, Figge, S & Hommel, D 2005, 'Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures', Physica Status Solidi C: Conferences, vol. 2, no. 3, pp. 1056-1059. https://doi.org/10.1002/pssc.200460619

TY - JOUR

T1 - Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

AU - Godlewski, M.

AU - Ivanov, V. Yu

AU - Łusakowska, E.

AU - Boźek, R.

AU - Masojedovas, S.

AU - Juršénas, S.

AU - Kazlauskas, K.

AU - Žukauskas, A.

AU - Goldys, E. M.

AU - Phillips, M. R.

AU - Böttcher, T.

AU - Figge, S.

AU - Hommel, D.

PY - 2005

Y1 - 2005

N2 - Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed.

AB - Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed.

UR - https://www.scopus.com/pages/publications/27344451093

U2 - 10.1002/pssc.200460619

DO - 10.1002/pssc.200460619

M3 - Article

AN - SCOPUS:27344451093

SN - 1610-1634

VL - 2

SP - 1056

EP - 1059

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 3

ER -

Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

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