TY - JOUR
T1 - Influence of thermal treatment on the near-infrared broadband luminescence of Bi
T2 - CsI crystals
AU - Fan, Xiao
AU - Su, Liangbi
AU - Ren, Guohao
AU - Jiang, Xiantao
AU - Xing, Haibo
AU - Xu, Jun
AU - Tang, Huili
AU - Li, Hongjun
AU - Zheng, Lihe
AU - Qian, Xiaobo
AU - Feng, He
PY - 2013/3
Y1 - 2013/3
N2 - Near-infrared (NIR) emitting active centers can exist abundant in Bi:CsI crystal. In addition, Bi:CsI have the simplest crystal structure, body-centered cubic (BCC). In this paper, annealing and quenching treatments were carried out in detail to identify the nature of NIR emitting active centers in Bi:CsI crystals. The changes of absorption and emission spectra with increasing the thermal treatment temperature indicated that the two NIR emission bands at 1210 nm and 1580 nm were related to Bi+ and Bi2 +, respectively. Besides, the assignments of absorption bands and the thermal behaviors of Bi3+, Bi2+, Bi+ and Bi2 + were discussed as well.
AB - Near-infrared (NIR) emitting active centers can exist abundant in Bi:CsI crystal. In addition, Bi:CsI have the simplest crystal structure, body-centered cubic (BCC). In this paper, annealing and quenching treatments were carried out in detail to identify the nature of NIR emitting active centers in Bi:CsI crystals. The changes of absorption and emission spectra with increasing the thermal treatment temperature indicated that the two NIR emission bands at 1210 nm and 1580 nm were related to Bi+ and Bi2 +, respectively. Besides, the assignments of absorption bands and the thermal behaviors of Bi3+, Bi2+, Bi+ and Bi2 + were discussed as well.
UR - http://www.scopus.com/inward/record.url?scp=84875730127&partnerID=8YFLogxK
U2 - 10.1364/OME.3.000400
DO - 10.1364/OME.3.000400
M3 - Article
AN - SCOPUS:84875730127
SN - 2159-3930
VL - 3
SP - 400
EP - 406
JO - Optical Materials Express
JF - Optical Materials Express
IS - 3
ER -