InGaAs FinFET modeling using industry standard compact model BSIM-CMG

S. Khandelwal; J. P. Duarte; N. Paydavosi; Y. S. Chauhan; J. J. Gu; M. Si; P. D. Ye; C. Hu

InGaAs FinFET modeling using industry standard compact model BSIM-CMG

S. Khandelwal, J. P. Duarte, N. Paydavosi, Y. S. Chauhan, J. J. Gu, M. Si, P. D. Ye, C. Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

Abstract

In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIM-CMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen in carrier mobility behavior of InGaAs FinFETs compared to silicon devices can be accounted for in the model. Furthermore, the calibrated model is used for performance projection in these devices. It is found that parasitic resistance and mobility reduction with vertical field limit the performance of these devices.

Original language	English
Title of host publication	Nanotech
Subtitle of host publication	Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo
Place of Publication	Cambridge, Massachusettes
Publisher	Nano Science and Technology Institute
Pages	475-478
Number of pages	4
Volume	2
ISBN (Print)	9781482258271
Publication status	Published - 2014
Externally published	Yes
Event	Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 - Washington, DC, United States Duration: 15 Jun 2014 → 18 Jun 2014

Other

Other	Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
Country/Territory	United States
City	Washington, DC
Period	15/06/14 → 18/06/14

Keywords

InGaAs FinFETs
compact models
BSIM-CMG

Cite this

@inproceedings{7b4c465b3fef4a1d90b0c3573f49854d,

title = "InGaAs FinFET modeling using industry standard compact model BSIM-CMG",

abstract = "In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIM-CMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen in carrier mobility behavior of InGaAs FinFETs compared to silicon devices can be accounted for in the model. Furthermore, the calibrated model is used for performance projection in these devices. It is found that parasitic resistance and mobility reduction with vertical field limit the performance of these devices.",

keywords = "InGaAs FinFETs, compact models, BSIM-CMG",

author = "S. Khandelwal and Duarte, {J. P.} and N. Paydavosi and Chauhan, {Y. S.} and Gu, {J. J.} and M. Si and Ye, {P. D.} and C. Hu",

year = "2014",

language = "English",

isbn = "9781482258271",

volume = "2",

pages = "475--478",

booktitle = "Nanotech",

publisher = "Nano Science and Technology Institute",

note = "Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 ; Conference date: 15-06-2014 Through 18-06-2014",

}

Khandelwal, S, Duarte, JP, Paydavosi, N, Chauhan, YS, Gu, JJ, Si, M, Ye, PD & Hu, C 2014, InGaAs FinFET modeling using industry standard compact model BSIM-CMG. in Nanotech: Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo . vol. 2, Nano Science and Technology Institute, Cambridge, Massachusettes, pp. 475-478, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014, Washington, DC, United States, 15/06/14.

InGaAs FinFET modeling using industry standard compact model BSIM-CMG. / Khandelwal, S.; Duarte, J. P.; Paydavosi, N. et al.
Nanotech: Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo . Vol. 2 Cambridge, Massachusettes: Nano Science and Technology Institute, 2014. p. 475-478.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - InGaAs FinFET modeling using industry standard compact model BSIM-CMG

AU - Khandelwal, S.

AU - Duarte, J. P.

AU - Paydavosi, N.

AU - Chauhan, Y. S.

AU - Gu, J. J.

AU - Si, M.

AU - Ye, P. D.

AU - Hu, C.

PY - 2014

Y1 - 2014

N2 - In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIM-CMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen in carrier mobility behavior of InGaAs FinFETs compared to silicon devices can be accounted for in the model. Furthermore, the calibrated model is used for performance projection in these devices. It is found that parasitic resistance and mobility reduction with vertical field limit the performance of these devices.

AB - In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIM-CMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen in carrier mobility behavior of InGaAs FinFETs compared to silicon devices can be accounted for in the model. Furthermore, the calibrated model is used for performance projection in these devices. It is found that parasitic resistance and mobility reduction with vertical field limit the performance of these devices.

KW - InGaAs FinFETs

KW - compact models

KW - BSIM-CMG

UR - http://www.scopus.com/inward/record.url?scp=84907415856&partnerID=8YFLogxK

M3 - Conference proceeding contribution

AN - SCOPUS:84907415856

SN - 9781482258271

VL - 2

SP - 475

EP - 478

BT - Nanotech

PB - Nano Science and Technology Institute

CY - Cambridge, Massachusettes

T2 - Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014

Y2 - 15 June 2014 through 18 June 2014

ER -

InGaAs FinFET modeling using industry standard compact model BSIM-CMG

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