InGaAs FinFET modeling using industry standard compact model BSIM-CMG

S. Khandelwal, J. P. Duarte, N. Paydavosi, Y. S. Chauhan, J. J. Gu, M. Si, P. D. Ye, C. Hu

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIM-CMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen in carrier mobility behavior of InGaAs FinFETs compared to silicon devices can be accounted for in the model. Furthermore, the calibrated model is used for performance projection in these devices. It is found that parasitic resistance and mobility reduction with vertical field limit the performance of these devices.

Original languageEnglish
Title of host publicationNanotech
Subtitle of host publicationTechnical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo
Place of PublicationCambridge, Massachusettes
PublisherNano Science and Technology Institute
Pages475-478
Number of pages4
Volume2
ISBN (Print)9781482258271
Publication statusPublished - 2014
Externally publishedYes
EventNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 - Washington, DC, United States
Duration: 15 Jun 201418 Jun 2014

Other

OtherNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
CountryUnited States
CityWashington, DC
Period15/06/1418/06/14

Keywords

  • InGaAs FinFETs
  • compact models
  • BSIM-CMG

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