In this paper, the authors report on epitaxial thin InN layers grown on commercially available undoped GaN buffer layers and on Ga2O 3 interlayers produced by Migration-Enhanced Afterglow Epitaxy (MEAglow). The InN layers reported here, also grown by the MEAglow technique, are 100-200 nm thick and have a measured absorption edge between 1.3 and 1.95 eV. Advancements in the growth process have now allowed the authors to improve the InN layers so that the growth has excellent two-dimensional morphology. Scanning electron microscope images show that terracing is strongly evident for samples grown on GaN templates. Atomic force microscopy shows a maximum height of the steps of about 2 nm. For the samples grown on Ga2O 3, crystal quality is superior to InN grown on AlN buffers with similar thicknesses. X-ray diffraction ω-2θ measurements indicate a full width of half maximum (FWHM) of 342-389 arcseconds for these extremely thin layers; a good part of this x-ray diffraction FWHM is likely due to residual strain between the InN and GaN or between the InN and oxide.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - May 2014|