Inkjet method for direct patterned etching of silicon dioxide

Alison Lennon*, Roland Utama, Anita Ho-Baillie, Stuart Wenham

*Corresponding author for this work

Research output: Contribution to journalConference paper

5 Citations (Scopus)

Abstract

An inkjet printing method for the direct patterned etching of silicon dioxide is described. The method uses an inkjet device to deposit a pattern of a solution containing an inactive etching component onto a water soluble surface layer formed over the silicon dioxide. The inactive component reacts with the surface layer, where it contacts, to form an active etchant which etches the silicon dioxide under the surface layer to form a pattern of openings. The method has been successfully used to etch a frontcontact finger and busbar pattern in a silicon dioxide antireflection layer of a silicon solar cell.

Original languageEnglish
Pages (from-to)251-255
Number of pages5
JournalInternational Conference on Digital Printing Technologies
Volume2008
Publication statusPublished - 2008
Externally publishedYes
EventNIP24: 24th International Conference on Digital Printing Technologies and Digital Fabrication 2008 - Pittsburgh, PA, United States
Duration: 6 Sep 200811 Sep 2008

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