InN grown by migration enhanced afterglow (MEAglow)

Kenneth Scott A Butcher*, Dimiter Alexandrov, Penka Terziyska, Vasil Georgiev, Dimka Georgieva, Peter W. Binsted

*Corresponding author for this work

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

InN thin films were grown by a new technique, migration enhanced afterglow (MEAglow), a chemical vapour deposition (CVD) form of migration enhanced epitaxy (MEE). Here we describe the apparatus used for this form of film deposition, which includes a scalable hollow cathode nitrogen plasma source. Initial film growth results for InN are also presented including atomic force microscopy (AFM) images that indicate step flow growth with samples having root mean square (RMS) surface roughness of as little as 0.103nm in some circumstances for film growth on sapphire substrates. X-ray diffraction (XRD) results are also provided for samples with a full width half maximum (FWHM) of the (0002) ω-2Theta; peak of as little as 290 arcsec. Low pressure conditions that can result in damage to the InN during growth are described.

Original languageEnglish
Pages (from-to)41-44
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume209
Issue number1
DOIs
Publication statusPublished - Jan 2012
Externally publishedYes

Keywords

  • characterisation
  • hollow cathode
  • indium nitride
  • migration enhanced epitaxy

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