InN grown by migration enhanced afterglow (MEAglow)

Kenneth Scott A Butcher; Dimiter Alexandrov; Penka Terziyska; Vasil Georgiev; Dimka Georgieva; Peter W. Binsted

doi:10.1002/pssa.201100102

InN grown by migration enhanced afterglow (MEAglow)

Kenneth Scott A Butcher^*, Dimiter Alexandrov, Penka Terziyska, Vasil Georgiev, Dimka Georgieva, Peter W. Binsted

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

InN thin films were grown by a new technique, migration enhanced afterglow (MEAglow), a chemical vapour deposition (CVD) form of migration enhanced epitaxy (MEE). Here we describe the apparatus used for this form of film deposition, which includes a scalable hollow cathode nitrogen plasma source. Initial film growth results for InN are also presented including atomic force microscopy (AFM) images that indicate step flow growth with samples having root mean square (RMS) surface roughness of as little as 0.103nm in some circumstances for film growth on sapphire substrates. X-ray diffraction (XRD) results are also provided for samples with a full width half maximum (FWHM) of the (0002) ω-2Theta; peak of as little as 290 arcsec. Low pressure conditions that can result in damage to the InN during growth are described.

Original language	English
Pages (from-to)	41-44
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	209
Issue number	1
DOIs	https://doi.org/10.1002/pssa.201100102
Publication status	Published - Jan 2012
Externally published	Yes

Keywords

characterisation
hollow cathode
indium nitride
migration enhanced epitaxy

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10.1002/pssa.201100102

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abstract = "InN thin films were grown by a new technique, migration enhanced afterglow (MEAglow), a chemical vapour deposition (CVD) form of migration enhanced epitaxy (MEE). Here we describe the apparatus used for this form of film deposition, which includes a scalable hollow cathode nitrogen plasma source. Initial film growth results for InN are also presented including atomic force microscopy (AFM) images that indicate step flow growth with samples having root mean square (RMS) surface roughness of as little as 0.103nm in some circumstances for film growth on sapphire substrates. X-ray diffraction (XRD) results are also provided for samples with a full width half maximum (FWHM) of the (0002) ω-2Theta; peak of as little as 290 arcsec. Low pressure conditions that can result in damage to the InN during growth are described.",

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AU - Alexandrov, Dimiter

AU - Terziyska, Penka

AU - Georgiev, Vasil

AU - Georgieva, Dimka

AU - Binsted, Peter W.

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AB - InN thin films were grown by a new technique, migration enhanced afterglow (MEAglow), a chemical vapour deposition (CVD) form of migration enhanced epitaxy (MEE). Here we describe the apparatus used for this form of film deposition, which includes a scalable hollow cathode nitrogen plasma source. Initial film growth results for InN are also presented including atomic force microscopy (AFM) images that indicate step flow growth with samples having root mean square (RMS) surface roughness of as little as 0.103nm in some circumstances for film growth on sapphire substrates. X-ray diffraction (XRD) results are also provided for samples with a full width half maximum (FWHM) of the (0002) ω-2Theta; peak of as little as 290 arcsec. Low pressure conditions that can result in damage to the InN during growth are described.

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InN grown by migration enhanced afterglow (MEAglow)

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