TY - JOUR
T1 - InN grown by remote plasma-enhanced chemical vapor deposition
AU - Wintrebert-Fouquet, M.
AU - Butcher, K. Scott A
AU - Chen, P. P T
PY - 2004/8/15
Y1 - 2004/8/15
N2 - We present in this paper recent optical and electrical characterization results for InN thin films prepared by remote plasma-enhanced chemical vapor deposition. A series of samples were grown at different temperatures from 300°C to 500°C on Si and sapphire substrates. Films have been characterized by X-ray diffraction, and Hall measurements. Optical absorption data have 1-1.8eV absorption edges, dependent on growth temperature and growth period. Films over 10μm thick have been grown. For samples grown on sapphire, the variation of electrical properties depends on sample thickness.
AB - We present in this paper recent optical and electrical characterization results for InN thin films prepared by remote plasma-enhanced chemical vapor deposition. A series of samples were grown at different temperatures from 300°C to 500°C on Si and sapphire substrates. Films have been characterized by X-ray diffraction, and Hall measurements. Optical absorption data have 1-1.8eV absorption edges, dependent on growth temperature and growth period. Films over 10μm thick have been grown. For samples grown on sapphire, the variation of electrical properties depends on sample thickness.
KW - A1. Characterization
KW - A3. Chemical vapor deposition processes
KW - B1. Nitrides
UR - http://www.scopus.com/inward/record.url?scp=3342983214&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2004.05.043
DO - 10.1016/j.jcrysgro.2004.05.043
M3 - Article
AN - SCOPUS:3342983214
VL - 269
SP - 134
EP - 138
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -