InN grown by remote plasma-enhanced chemical vapor deposition

M. Wintrebert-Fouquet*, K. Scott A Butcher, P. P T Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

15 Citations (Scopus)


We present in this paper recent optical and electrical characterization results for InN thin films prepared by remote plasma-enhanced chemical vapor deposition. A series of samples were grown at different temperatures from 300°C to 500°C on Si and sapphire substrates. Films have been characterized by X-ray diffraction, and Hall measurements. Optical absorption data have 1-1.8eV absorption edges, dependent on growth temperature and growth period. Films over 10μm thick have been grown. For samples grown on sapphire, the variation of electrical properties depends on sample thickness.

Original languageEnglish
Pages (from-to)134-138
Number of pages5
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 15 Aug 2004


  • A1. Characterization
  • A3. Chemical vapor deposition processes
  • B1. Nitrides

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