InN grown by remote plasma-enhanced chemical vapor deposition

M. Wintrebert-Fouquet; K. Scott A Butcher; P. P T Chen

doi:10.1016/j.jcrysgro.2004.05.043

InN grown by remote plasma-enhanced chemical vapor deposition

M. Wintrebert-Fouquet^*, K. Scott A Butcher, P. P T Chen

^*Corresponding author for this work

Department of Physics and Astronomy

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

We present in this paper recent optical and electrical characterization results for InN thin films prepared by remote plasma-enhanced chemical vapor deposition. A series of samples were grown at different temperatures from 300°C to 500°C on Si and sapphire substrates. Films have been characterized by X-ray diffraction, and Hall measurements. Optical absorption data have 1-1.8eV absorption edges, dependent on growth temperature and growth period. Films over 10μm thick have been grown. For samples grown on sapphire, the variation of electrical properties depends on sample thickness.

Original language	English
Pages (from-to)	134-138
Number of pages	5
Journal	Journal of Crystal Growth
Volume	269
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.05.043
Publication status	Published - 15 Aug 2004

Keywords

A1. Characterization
A3. Chemical vapor deposition processes
B1. Nitrides

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10.1016/j.jcrysgro.2004.05.043

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title = "InN grown by remote plasma-enhanced chemical vapor deposition",

abstract = "We present in this paper recent optical and electrical characterization results for InN thin films prepared by remote plasma-enhanced chemical vapor deposition. A series of samples were grown at different temperatures from 300°C to 500°C on Si and sapphire substrates. Films have been characterized by X-ray diffraction, and Hall measurements. Optical absorption data have 1-1.8eV absorption edges, dependent on growth temperature and growth period. Films over 10μm thick have been grown. For samples grown on sapphire, the variation of electrical properties depends on sample thickness.",

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author = "M. Wintrebert-Fouquet and Butcher, {K. Scott A} and Chen, {P. P T}",

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T1 - InN grown by remote plasma-enhanced chemical vapor deposition

AU - Wintrebert-Fouquet, M.

AU - Butcher, K. Scott A

AU - Chen, P. P T

PY - 2004/8/15

Y1 - 2004/8/15

N2 - We present in this paper recent optical and electrical characterization results for InN thin films prepared by remote plasma-enhanced chemical vapor deposition. A series of samples were grown at different temperatures from 300°C to 500°C on Si and sapphire substrates. Films have been characterized by X-ray diffraction, and Hall measurements. Optical absorption data have 1-1.8eV absorption edges, dependent on growth temperature and growth period. Films over 10μm thick have been grown. For samples grown on sapphire, the variation of electrical properties depends on sample thickness.

AB - We present in this paper recent optical and electrical characterization results for InN thin films prepared by remote plasma-enhanced chemical vapor deposition. A series of samples were grown at different temperatures from 300°C to 500°C on Si and sapphire substrates. Films have been characterized by X-ray diffraction, and Hall measurements. Optical absorption data have 1-1.8eV absorption edges, dependent on growth temperature and growth period. Films over 10μm thick have been grown. For samples grown on sapphire, the variation of electrical properties depends on sample thickness.

KW - A1. Characterization

KW - A3. Chemical vapor deposition processes

KW - B1. Nitrides

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DO - 10.1016/j.jcrysgro.2004.05.043

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SP - 134

EP - 138

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

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