InN nanopillars grown from In-rich conditions by migration enhanced afterglow technique

Penka T. Terziyska*, Kenneth Scott Alexander Butcher, Daniela Gogova, Dimiter Alexandrov, Peter Binsted, Guosheng Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Self-catalytic growth of InN nanopillars on (0001) sapphire is reported under In-rich conditions, using the Migration Enhanced Afterglow (MEAglow) growth technique. The nanopillars are up to 2 μm in length and 100-200 nm in diameter, terminated with an In-metal droplet on the top, with growth direction and preferred orientation along the InN c-axis. The shape of the nanopillars is cylindrical and their diameter is determined by the diameter of the In-metal droplet. X-ray diffraction measurements indicate the presence of both cubic and hexagonal InN, with very good crystalline quality. The room temperature Raman spectrum shows the presence of the A1(TO), E2(high) and A1(LO) phonon modes of the hexagonal InN.

Original languageEnglish
Pages (from-to)155-157
Number of pages3
JournalMaterials Letters
Volume106
DOIs
Publication statusPublished - 2013
Externally publishedYes

Keywords

  • CVD
  • Indium nitride
  • Indium rich conditions
  • Migration enhanced
  • Nanopillars

Fingerprint Dive into the research topics of 'InN nanopillars grown from In-rich conditions by migration enhanced afterglow technique'. Together they form a unique fingerprint.

Cite this