InN on GaN heterostructure growth by Migration Enhanced Epitaxial Afterglow (MEAglow)

Peter W. Binsted*, Kenneth Scott A. Butcher, Dimiter Alexandrov, Penka Terziyska, Dimka Georgieva, Rositsa Gergova, Vasil Georgiev

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

8 Citations (Scopus)


In this paper we discuss the formation of InN on GaN heterostructures. Film growth was accomplished using a new method coined Migration Enhanced Epitaxial Afterglow (MEAglow), an improved form of pulsed delivery Plasma Enhanced Chemical Vapour Deposition (PECVD) [1]. Initial x-ray diffraction (XRD) analysis results indicated that an InGaN alloy layer formed under the InN during growth. No GaN was seen from the original buffer layer. It was postulated that indium metal deposited prior to complete nitridation diffused into the relatively thin GaN layer producing InGaN. To verify the integrity of the insulating GaN layer, a third party GaN substrate was substituted. Results were unchanged. Parameters were then modified to reduce the amount of indium used for the initial metal deposition. XRD results indicated a sharper interface between the semi-insulating GaN and conductive InN layer. Hall Effect measurements are included. We've shown that the growth of a device suitable heterostructure is possible using the MEAglow technique.

Original languageEnglish
Title of host publicationCompound Semiconductors for Generating, Emitting and Manipulating Energy
EditorsTingkai Li, Michael Mastro, Armin Dadgar, Hongxing Jiang, Jihyun Kim
Place of PublicationCambridge
PublisherCambridge University Press (CUP)
Number of pages6
ISBN (Print)9781605113739
Publication statusPublished - Jul 2012
Externally publishedYes
Event2011 MRS Fall Meeting - Boston, United States
Duration: 28 Nov 20112 Dec 2011

Publication series

NameMRS Proceedings
PublisherCambridge University Press


Other2011 MRS Fall Meeting
Country/TerritoryUnited States


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