InP-based radial heterostructures grown on [100] nanowires

H. A. Fonseka*, P. Caroff, Y. Guo, F. Wang, J. Wong-Leung, H. H. Tan, C. Jagadish

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

InP-InxGa(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability in the near to mid-infrared region is achieved by controlling the thickness and composition of the quantum well.

Original languageEnglish
Title of host publicationCOMMAD 2014
Subtitle of host publicationConference on Optoelectronic and Microelectronic Materials and Devices
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages168-170
Number of pages3
ISBN (Electronic)9781479968688
ISBN (Print)9781479968671
DOIs
Publication statusPublished - 10 Feb 2014
Event2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia
Duration: 14 Dec 201417 Dec 2014

Other

Other2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
CountryAustralia
CityPerth
Period14/12/1417/12/14

Keywords

  • Anisotropie facet growth
  • InGaAs
  • InP nanowires
  • Photoluminescence
  • Quantum well tube

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    Fonseka, H. A., Caroff, P., Guo, Y., Wang, F., Wong-Leung, J., Tan, H. H., & Jagadish, C. (2014). InP-based radial heterostructures grown on [100] nanowires. In COMMAD 2014: Conference on Optoelectronic and Microelectronic Materials and Devices (pp. 168-170). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2014.7038682