InP-based radial heterostructures grown on [100] nanowires

H. A. Fonseka; P. Caroff; Y. Guo; F. Wang; J. Wong-Leung; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2014.7038682

InP-based radial heterostructures grown on [100] nanowires

H. A. Fonseka^*, P. Caroff, Y. Guo, F. Wang, J. Wong-Leung, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

InP-In_xGa_(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability in the near to mid-infrared region is achieved by controlling the thickness and composition of the quantum well.

Original language	English
Title of host publication	COMMAD 2014
Subtitle of host publication	Conference on Optoelectronic and Microelectronic Materials and Devices
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	168-170
Number of pages	3
ISBN (Electronic)	9781479968688
ISBN (Print)	9781479968671
DOIs	https://doi.org/10.1109/COMMAD.2014.7038682
Publication status	Published - 10 Feb 2014
Event	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia Duration: 14 Dec 2014 → 17 Dec 2014

Other

Other	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Country/Territory	Australia
City	Perth
Period	14/12/14 → 17/12/14

Keywords

Anisotropie facet growth
InGaAs
InP nanowires
Photoluminescence
Quantum well tube

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10.1109/COMMAD.2014.7038682

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@inproceedings{45ed5a6213a54531bb2a4e2e43ee2ae0,

title = "InP-based radial heterostructures grown on [100] nanowires",

abstract = "InP-InxGa(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability in the near to mid-infrared region is achieved by controlling the thickness and composition of the quantum well.",

keywords = "Anisotropie facet growth, InGaAs, InP nanowires, Photoluminescence, Quantum well tube",

author = "Fonseka, {H. A.} and P. Caroff and Y. Guo and F. Wang and J. Wong-Leung and Tan, {H. H.} and C. Jagadish",

year = "2014",

month = feb,

day = "10",

doi = "10.1109/COMMAD.2014.7038682",

language = "English",

isbn = "9781479968671",

pages = "168--170",

booktitle = "COMMAD 2014",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 ; Conference date: 14-12-2014 Through 17-12-2014",

}

Fonseka, HA, Caroff, P, Guo, Y, Wang, F, Wong-Leung, J, Tan, HH & Jagadish, C 2014, InP-based radial heterostructures grown on [100] nanowires. in COMMAD 2014: Conference on Optoelectronic and Microelectronic Materials and Devices. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 168-170, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Perth, Australia, 14/12/14. https://doi.org/10.1109/COMMAD.2014.7038682

InP-based radial heterostructures grown on [100] nanowires. / Fonseka, H. A.; Caroff, P.; Guo, Y. et al.
COMMAD 2014: Conference on Optoelectronic and Microelectronic Materials and Devices. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2014. p. 168-170.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - InP-based radial heterostructures grown on [100] nanowires

AU - Fonseka, H. A.

AU - Caroff, P.

AU - Guo, Y.

AU - Wang, F.

AU - Wong-Leung, J.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2014/2/10

Y1 - 2014/2/10

N2 - InP-InxGa(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability in the near to mid-infrared region is achieved by controlling the thickness and composition of the quantum well.

AB - InP-InxGa(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability in the near to mid-infrared region is achieved by controlling the thickness and composition of the quantum well.

KW - Anisotropie facet growth

KW - InGaAs

KW - InP nanowires

KW - Photoluminescence

KW - Quantum well tube

UR - http://www.scopus.com/inward/record.url?scp=84949927109&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2014.7038682

DO - 10.1109/COMMAD.2014.7038682

M3 - Conference proceeding contribution

AN - SCOPUS:84949927109

SN - 9781479968671

SP - 168

EP - 170

BT - COMMAD 2014

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Y2 - 14 December 2014 through 17 December 2014

ER -

InP-based radial heterostructures grown on [100] nanowires

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Keywords

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