InP-HEMT based monolithic oscillators at 100 GHz

Oya Sevimli; John W. Archer

doi:10.1109/APMC.2000.925922

InP-HEMT based monolithic oscillators at 100 GHz

Oya Sevimli^*, John W. Archer

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

Two InP HEMT oscillator circuits are described. Both designs are identical except for the frequency-setting elements. In the first design, an open-ended stub is used to create a fixed frequency oscillator. The second design includes a HEMT diode as a varactor, producing a voltage-controlled oscillator. Several examples are of each circuit were measured on-wafer. The oscillator frequencies were between 99.5 and 102.1 GHz and the best output signal level was -6.3 dBm. The VCO circuits' tuning range varied, chip-to-chip, between 230 and 950 MHz. Average phase noise of the VCO and the fixed frequency oscillator circuits was -96.5 dBc/Hz and -98 dBc/Hz respectively at 10 MHz from the carrier.

Original language	English
Title of host publication	2000 Asia Pacific Microwave Conference Proceedings
Subtitle of host publication	3–6 December, 2000, Wentworth Hotel Sydney, Australia
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
DOIs	https://doi.org/10.1109/APMC.2000.925922
Publication status	Published - 2000
Externally published	Yes
Event	12 Asia-Pacific Microwave Conference - Sydney, Australia Duration: 3 Dec 2000 → 6 Dec 2000

Other

Other	12 Asia-Pacific Microwave Conference
City	Sydney, Australia
Period	3/12/00 → 6/12/00

Access to Document

10.1109/APMC.2000.925922

Cite this

@inproceedings{b983177a1480418a9c3e7dd74b099db1,

title = "InP-HEMT based monolithic oscillators at 100 GHz",

abstract = "Two InP HEMT oscillator circuits are described. Both designs are identical except for the frequency-setting elements. In the first design, an open-ended stub is used to create a fixed frequency oscillator. The second design includes a HEMT diode as a varactor, producing a voltage-controlled oscillator. Several examples are of each circuit were measured on-wafer. The oscillator frequencies were between 99.5 and 102.1 GHz and the best output signal level was -6.3 dBm. The VCO circuits' tuning range varied, chip-to-chip, between 230 and 950 MHz. Average phase noise of the VCO and the fixed frequency oscillator circuits was -96.5 dBc/Hz and -98 dBc/Hz respectively at 10 MHz from the carrier.",

author = "Oya Sevimli and Archer, {John W.}",

year = "2000",

doi = "10.1109/APMC.2000.925922",

language = "English",

pages = "1--4",

booktitle = "2000 Asia Pacific Microwave Conference Proceedings",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "12 Asia-Pacific Microwave Conference ; Conference date: 03-12-2000 Through 06-12-2000",

}

Sevimli, O & Archer, JW 2000, InP-HEMT based monolithic oscillators at 100 GHz. in 2000 Asia Pacific Microwave Conference Proceedings: 3–6 December, 2000, Wentworth Hotel Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-4, 12 Asia-Pacific Microwave Conference, Sydney, Australia, 3/12/00. https://doi.org/10.1109/APMC.2000.925922

InP-HEMT based monolithic oscillators at 100 GHz. / Sevimli, Oya; Archer, John W.
2000 Asia Pacific Microwave Conference Proceedings: 3–6 December, 2000, Wentworth Hotel Sydney, Australia. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - InP-HEMT based monolithic oscillators at 100 GHz

AU - Sevimli, Oya

AU - Archer, John W.

PY - 2000

Y1 - 2000

N2 - Two InP HEMT oscillator circuits are described. Both designs are identical except for the frequency-setting elements. In the first design, an open-ended stub is used to create a fixed frequency oscillator. The second design includes a HEMT diode as a varactor, producing a voltage-controlled oscillator. Several examples are of each circuit were measured on-wafer. The oscillator frequencies were between 99.5 and 102.1 GHz and the best output signal level was -6.3 dBm. The VCO circuits' tuning range varied, chip-to-chip, between 230 and 950 MHz. Average phase noise of the VCO and the fixed frequency oscillator circuits was -96.5 dBc/Hz and -98 dBc/Hz respectively at 10 MHz from the carrier.

AB - Two InP HEMT oscillator circuits are described. Both designs are identical except for the frequency-setting elements. In the first design, an open-ended stub is used to create a fixed frequency oscillator. The second design includes a HEMT diode as a varactor, producing a voltage-controlled oscillator. Several examples are of each circuit were measured on-wafer. The oscillator frequencies were between 99.5 and 102.1 GHz and the best output signal level was -6.3 dBm. The VCO circuits' tuning range varied, chip-to-chip, between 230 and 950 MHz. Average phase noise of the VCO and the fixed frequency oscillator circuits was -96.5 dBc/Hz and -98 dBc/Hz respectively at 10 MHz from the carrier.

UR - http://www.scopus.com/inward/record.url?scp=0034462514&partnerID=8YFLogxK

U2 - 10.1109/APMC.2000.925922

DO - 10.1109/APMC.2000.925922

M3 - Conference proceeding contribution

AN - SCOPUS:0034462514

SP - 1

EP - 4

BT - 2000 Asia Pacific Microwave Conference Proceedings

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 12 Asia-Pacific Microwave Conference

Y2 - 3 December 2000 through 6 December 2000

ER -

InP-HEMT based monolithic oscillators at 100 GHz

Abstract

Other

Access to Document

Other files and links

Fingerprint

Cite this