InP-HEMT based monolithic oscillators at 100 GHz

Oya Sevimli*, John W. Archer

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review


Two InP HEMT oscillator circuits are described. Both designs are identical except for the frequency-setting elements. In the first design, an open-ended stub is used to create a fixed frequency oscillator. The second design includes a HEMT diode as a varactor, producing a voltage-controlled oscillator. Several examples are of each circuit were measured on-wafer. The oscillator frequencies were between 99.5 and 102.1 GHz and the best output signal level was -6.3 dBm. The VCO circuits' tuning range varied, chip-to-chip, between 230 and 950 MHz. Average phase noise of the VCO and the fixed frequency oscillator circuits was -96.5 dBc/Hz and -98 dBc/Hz respectively at 10 MHz from the carrier.

Original languageEnglish
Title of host publication2000 Asia Pacific Microwave Conference Proceedings
Subtitle of host publication3–6 December, 2000, Wentworth Hotel Sydney, Australia
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
Publication statusPublished - 2000
Externally publishedYes
Event12 Asia-Pacific Microwave Conference - Sydney, Australia
Duration: 3 Dec 20006 Dec 2000


Other12 Asia-Pacific Microwave Conference
CitySydney, Australia


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