InP/InGaAs double-heterojunction bipolar transistors with high speed, gain and current-driving capability

M. L. Parrilla*, D. J. Newson, J. A. Quayle, M. D A MacBean, D. J. Skellern

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

InP/InGaAs double-heterojunction bipolar transistors (DHBTs) have been fabricated with an emitter area of 9 × 9 μm2 using a nonselfaligned process. Small-signal current gain in excess of 400 was obtained. Device measurements given an f1 - 39 GHz which, to the authors' knowledge, is the highest value reported for an InP/InGaAs DHBT. The value of f1 is in excess of 30 GHz for a range of current densities from 8 to 100kA cm-2.

Original languageEnglish
Pages (from-to)85-86
Number of pages2
JournalElectronics Letters
Volume28
Issue number1
Publication statusPublished - 2 Jan 1992

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