Abstract
InP/InGaAs double-heterojunction bipolar transistors (DHBTs) have been fabricated with an emitter area of 9 × 9 μm2 using a nonselfaligned process. Small-signal current gain in excess of 400 was obtained. Device measurements given an f1 - 39 GHz which, to the authors' knowledge, is the highest value reported for an InP/InGaAs DHBT. The value of f1 is in excess of 30 GHz for a range of current densities from 8 to 100kA cm-2.
Original language | English |
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Pages (from-to) | 85-86 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 28 |
Issue number | 1 |
Publication status | Published - 2 Jan 1992 |