InP/InGaAs double-heterojunction bipolar transistors with high speed, gain and current-driving capability

M. L. Parrilla; D. J. Newson; J. A. Quayle; M. D A MacBean; D. J. Skellern

InP/InGaAs double-heterojunction bipolar transistors with high speed, gain and current-driving capability

M. L. Parrilla^*, D. J. Newson, J. A. Quayle, M. D A MacBean, D. J. Skellern

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

InP/InGaAs double-heterojunction bipolar transistors (DHBTs) have been fabricated with an emitter area of 9 × 9 μm² using a nonselfaligned process. Small-signal current gain in excess of 400 was obtained. Device measurements given an f₁ - 39 GHz which, to the authors' knowledge, is the highest value reported for an InP/InGaAs DHBT. The value of f₁ is in excess of 30 GHz for a range of current densities from 8 to 100kA cm^-2.

Original language	English
Pages (from-to)	85-86
Number of pages	2
Journal	Electronics Letters
Volume	28
Issue number	1
Publication status	Published - 2 Jan 1992

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title = "InP/InGaAs double-heterojunction bipolar transistors with high speed, gain and current-driving capability",

abstract = "InP/InGaAs double-heterojunction bipolar transistors (DHBTs) have been fabricated with an emitter area of 9 × 9 μm2 using a nonselfaligned process. Small-signal current gain in excess of 400 was obtained. Device measurements given an f1 - 39 GHz which, to the authors' knowledge, is the highest value reported for an InP/InGaAs DHBT. The value of f1 is in excess of 30 GHz for a range of current densities from 8 to 100kA cm-2.",

author = "Parrilla, {M. L.} and Newson, {D. J.} and Quayle, {J. A.} and MacBean, {M. D A} and Skellern, {D. J.}",

year = "1992",

month = jan,

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language = "English",

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pages = "85--86",

journal = "Electronics Letters",

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T1 - InP/InGaAs double-heterojunction bipolar transistors with high speed, gain and current-driving capability

AU - Parrilla, M. L.

AU - Newson, D. J.

AU - Quayle, J. A.

AU - MacBean, M. D A

AU - Skellern, D. J.

PY - 1992/1/2

Y1 - 1992/1/2

N2 - InP/InGaAs double-heterojunction bipolar transistors (DHBTs) have been fabricated with an emitter area of 9 × 9 μm2 using a nonselfaligned process. Small-signal current gain in excess of 400 was obtained. Device measurements given an f1 - 39 GHz which, to the authors' knowledge, is the highest value reported for an InP/InGaAs DHBT. The value of f1 is in excess of 30 GHz for a range of current densities from 8 to 100kA cm-2.

AB - InP/InGaAs double-heterojunction bipolar transistors (DHBTs) have been fabricated with an emitter area of 9 × 9 μm2 using a nonselfaligned process. Small-signal current gain in excess of 400 was obtained. Device measurements given an f1 - 39 GHz which, to the authors' knowledge, is the highest value reported for an InP/InGaAs DHBT. The value of f1 is in excess of 30 GHz for a range of current densities from 8 to 100kA cm-2.

UR - http://www.scopus.com/inward/record.url?scp=0027107038&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0027107038

VL - 28

SP - 85

EP - 86

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 1

ER -

InP/InGaAs double-heterojunction bipolar transistors with high speed, gain and current-driving capability

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