Abstract
This paper reports on the development of high frequency, high efficiency integrated supply modulators for airborne and space based high power amplifier modules. The power switches within the integrated modulators were RF HEMTs optimized for power amplifier applications. The modulators were fabricated in commercial foundry GaN process and delivered 10W of output power with an efficiency of 83.5% while switching at a frequency of 100 MHz. Development of high frequency supply modulators paves the way for integration of the HPA and modulators onto the MMIC die and on-chip drain bias modulation for efficiency enhancement of the HPA.
Original language | English |
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Article number | 7131257 |
Pages (from-to) | 1617-1622 |
Number of pages | 6 |
Journal | IEEE National Radar Conference - Proceedings |
Volume | 2015-June |
Issue number | June |
DOIs | |
Publication status | Published - 22 Jun 2015 |
Event | IEEE Radar Conference (RadarCon) - Arlington, United States Duration: 10 May 2015 → 15 May 2015 |
Keywords
- MMIC power switches
- supply modulators
- power converters
- integrated power switches