Integration of SiC devices and high-frequency transformer for high-power renewable energy applications

Weichong Yao, Junwei Lu*, Foad Taghizadeh, Feifei Bai, Andrew Seagar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)
153 Downloads (Pure)

Abstract

This paper presents a novel structure of Integrated SiC MOSFETs with a high-frequency transformer (I-SiC-HFT) for various high-power isolated DC–DC converters. Several resonant converters are considered for integration in this paper, including the phase-shift full-bridge (PSFB) converter, inductor–inductor–capacitor (LLC) resonant converter, bidirectional PSFB converter, and capacitor–inductor–inductor–capacitor (CLLC) resonant converter. The applications of I-SiC-HFT are focused on V2G EV battery charging systems, energy storage in DC and AC microgrids, and renewable energy systems. SiC devices, including MOSFETs, Schottky diodes, and MOSFET modules, are used in this novel structure of I-SiC-HFT. The high-frequency magnetic structure uses distributed ferrite cores to form a large central space to accommodate SiC devices. The optimized architecture of I-SiC-HFT and heatsink structure is proposed for thermal management of SiC devices. To prove the concept, a small-scale 1.5 kW prototype I-SiC-HFT is used to demonstrate the basic structure and various performance indicators through the FEM based electromagnetic simulation and DC–DC converter experiments.

Original languageEnglish
Article number1538
Pages (from-to)1-27
Number of pages27
JournalEnergies
Volume16
Issue number3
DOIs
Publication statusPublished - 1 Feb 2023

Bibliographical note

Copyright the Author(s) 2023. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

Keywords

  • high-frequency magnetics
  • high-power high-frequency transformers
  • full-bridge isolated DC–DC converters
  • SiC MOSFET

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