Integration of silicon-carbide Schottky diodes with high-frequency transformer

Weichong Yao, Tania Parveen, Junwei Lu, Andrew Seagar, Feifei Bai, Foad Taghizadeh

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

Integration of silicon-carbide (SiC) Schottky diodes into a high-frequency (HF) transformer is introduced. SiC Schottky diodes were integrated into a tokamak-like prototype HF transformer. The modular-based unique structure of the HF transformer can be designed and optimised for integration with various SiC devices. The size of a power converter can be shrunk by using the proposed transformer structure integrated with SiC devices. Taking into account the space for SiC Schottky diodes, the magnetic structure of HF transformer is analysed via the three-dimensional (3-D) finite element method (FEM) simulation technique. The experimental results including the prototype HF transformer itself and SiC Schottky diodes integrated within the HF transformer are presented.

Original languageEnglish
Title of host publication2022 IEEE PES 14th Asia-Pacific Power and Energy Engineering Conference (APPEEC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-5
Number of pages5
ISBN (Electronic)9781665467384, 9781665467377
ISBN (Print)9781665467391
DOIs
Publication statusPublished - 2022
Event14th IEEE PES Asia-Pacific Power and Energy Engineering Conference, APPEEC 2022 - Melbourne, Australia
Duration: 20 Nov 202223 Nov 2022

Conference

Conference14th IEEE PES Asia-Pacific Power and Energy Engineering Conference, APPEEC 2022
Country/TerritoryAustralia
CityMelbourne
Period20/11/2223/11/22

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