Inter-island energy transfer and in-plane exciton migration in AlGaAs/GaAs quantum wells detected by exciton dynamics

M. Godlewski; P. O. Holz; J. P. Bergman; B. Monemar; K. Reginski; A. Bugajski; E. M. Goldys; T. L. Tansley

doi:10.1006/spmi.1996.0290

Inter-island energy transfer and in-plane exciton migration in AlGaAs/GaAs quantum wells detected by exciton dynamics

M. Godlewski^*, P. O. Holz, J. P. Bergman, B. Monemar, K. Reginski, A. Bugajski, E. M. Goldys, T. L. Tansley

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We present the results of optical, steady-state and time-resolved studies of photoluminescence and photoluminescence excitation in high-quality Al_0.3Ga_0.7As/GaAs quantum wells in which the presence of large (larger than the exciton radius) atomically flat islands can be inferred, identical to the case of interrupted MBE growth. Migration of excitons towards lower-lying energy states induced by local potential fluctuations and/or progressive localisation has been revealed and the transition rate between quantum well regions 24 to 25 monolayers thick has been derived to be 290 ps^-1.

Original language	English
Pages (from-to)	107-111
Number of pages	5
Journal	Superlattices and Microstructures
Volume	23
Issue number	1
DOIs	https://doi.org/10.1006/spmi.1996.0290
Publication status	Published - Jan 1998

Keywords

exciton dynamics
GaAs/AlGaAs
quantum wells

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10.1006/spmi.1996.0290

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title = "Inter-island energy transfer and in-plane exciton migration in AlGaAs/GaAs quantum wells detected by exciton dynamics",

abstract = "We present the results of optical, steady-state and time-resolved studies of photoluminescence and photoluminescence excitation in high-quality Al0.3Ga0.7As/GaAs quantum wells in which the presence of large (larger than the exciton radius) atomically flat islands can be inferred, identical to the case of interrupted MBE growth. Migration of excitons towards lower-lying energy states induced by local potential fluctuations and/or progressive localisation has been revealed and the transition rate between quantum well regions 24 to 25 monolayers thick has been derived to be 290 ps-1.",

keywords = "exciton dynamics, GaAs/AlGaAs, quantum wells",

author = "M. Godlewski and Holz, {P. O.} and Bergman, {J. P.} and B. Monemar and K. Reginski and A. Bugajski and Goldys, {E. M.} and Tansley, {T. L.}",

year = "1998",

month = jan,

doi = "10.1006/spmi.1996.0290",

language = "English",

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journal = "Superlattices and Microstructures",

issn = "0749-6036",

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TY - JOUR

T1 - Inter-island energy transfer and in-plane exciton migration in AlGaAs/GaAs quantum wells detected by exciton dynamics

AU - Godlewski, M.

AU - Holz, P. O.

AU - Bergman, J. P.

AU - Monemar, B.

AU - Reginski, K.

AU - Bugajski, A.

AU - Goldys, E. M.

AU - Tansley, T. L.

PY - 1998/1

Y1 - 1998/1

N2 - We present the results of optical, steady-state and time-resolved studies of photoluminescence and photoluminescence excitation in high-quality Al0.3Ga0.7As/GaAs quantum wells in which the presence of large (larger than the exciton radius) atomically flat islands can be inferred, identical to the case of interrupted MBE growth. Migration of excitons towards lower-lying energy states induced by local potential fluctuations and/or progressive localisation has been revealed and the transition rate between quantum well regions 24 to 25 monolayers thick has been derived to be 290 ps-1.

AB - We present the results of optical, steady-state and time-resolved studies of photoluminescence and photoluminescence excitation in high-quality Al0.3Ga0.7As/GaAs quantum wells in which the presence of large (larger than the exciton radius) atomically flat islands can be inferred, identical to the case of interrupted MBE growth. Migration of excitons towards lower-lying energy states induced by local potential fluctuations and/or progressive localisation has been revealed and the transition rate between quantum well regions 24 to 25 monolayers thick has been derived to be 290 ps-1.

KW - exciton dynamics

KW - GaAs/AlGaAs

KW - quantum wells

UR - http://www.scopus.com/inward/record.url?scp=0031672693&partnerID=8YFLogxK

U2 - 10.1006/spmi.1996.0290

DO - 10.1006/spmi.1996.0290

M3 - Article

AN - SCOPUS:0031672693

SN - 0749-6036

VL - 23

SP - 107

EP - 111

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1

ER -

Inter-island energy transfer and in-plane exciton migration in AlGaAs/GaAs quantum wells detected by exciton dynamics

Abstract

Keywords

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