Inter-island energy transfer and in-plane exciton migration in AlGaAs/GaAs quantum wells detected by exciton dynamics

M. Godlewski*, P. O. Holz, J. P. Bergman, B. Monemar, K. Reginski, A. Bugajski, E. M. Goldys, T. L. Tansley

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

We present the results of optical, steady-state and time-resolved studies of photoluminescence and photoluminescence excitation in high-quality Al0.3Ga0.7As/GaAs quantum wells in which the presence of large (larger than the exciton radius) atomically flat islands can be inferred, identical to the case of interrupted MBE growth. Migration of excitons towards lower-lying energy states induced by local potential fluctuations and/or progressive localisation has been revealed and the transition rate between quantum well regions 24 to 25 monolayers thick has been derived to be 290 ps-1.

Original languageEnglish
Pages (from-to)107-111
Number of pages5
JournalSuperlattices and Microstructures
Volume23
Issue number1
DOIs
Publication statusPublished - Jan 1998

Keywords

  • exciton dynamics
  • GaAs/AlGaAs
  • quantum wells

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