Interisland exciton migration and enhanced bound exciton recombination in an AlGaAs/GaAs quantum well structure grown by molecular beam epitaxy without growth interruptions at interfaces
M. Godlewski*, P. O. Holtz, J. P. Bergman, B. Monemar, K. Regiński, M. Bugajski, E. M. Goldys, T. L. Tansley
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
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