Interlink between structural and optical Properties of GaN and GaN/AIGaN heterostructures

M. Godlewski, E. M. Goldys

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Original language	English
Title of host publication	III-nitride semiconductors
Subtitle of host publication	optical properties
Editors	M. O. Manasreh, H. X Jiang
Place of Publication	New York; London
Publisher	Taylor & Francis
Pages	259-338
Number of pages	80
Volume	2
ISBN (Print)	1560329726
Publication status	Published - 2002

Name	Optoelectronic properties of semiconductors and superlattices
Publisher	Taylor and Francis
Volume	14

Cite this

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title = "Interlink between structural and optical Properties of GaN and GaN/AIGaN heterostructures",

author = "M. Godlewski and Goldys, \{E. M.\}",

year = "2002",

language = "English",

isbn = "1560329726",

volume = "2",

series = "Optoelectronic properties of semiconductors and superlattices",

publisher = "Taylor \& Francis",

pages = "259--338",

editor = "Manasreh, \{M. O.\} and Jiang, \{H. X\}",

booktitle = "III-nitride semiconductors",

address = "United Kingdom",

}

Interlink between structural and optical Properties of GaN and GaN/AIGaN heterostructures. / Godlewski, M.; Goldys, E. M.
III-nitride semiconductors: optical properties. ed. / M. O. Manasreh; H. X Jiang. Vol. 2 New York; London: Taylor & Francis, 2002. p. 259-338 (Optoelectronic properties of semiconductors and superlattices; Vol. 14).

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

TY - CHAP

T1 - Interlink between structural and optical Properties of GaN and GaN/AIGaN heterostructures

AU - Godlewski, M.

AU - Goldys, E. M.

PY - 2002

Y1 - 2002

M3 - Chapter

SN - 1560329726

VL - 2

T3 - Optoelectronic properties of semiconductors and superlattices

SP - 259

EP - 338

BT - III-nitride semiconductors

A2 - Manasreh, M. O.

A2 - Jiang, H. X

PB - Taylor & Francis

CY - New York; London

ER -